Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.
1. A photodetector comprising:
a semiconductor substrate;
a plurality of pixel regions, each of the plurality of pixel regions comprising an optically sensitive layer over the semiconductor substrate; and
a pixel circuit for each of the plurality of pixel regions, each pixel circuit comprising a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions, the optically sensitive layer being in electrical communication with a portion of a silicon diode, the optically sensitive layer and the silicon diode thereby forming the pinned photodiode, where, at a wavelength, the optically sensitive layer has an absorption length that is less than that of silicon.
2. A photodetector comprising:
a semiconductor substrate;
a plurality of pixel regions, each of the plurality of pixel regions comprising an optically sensitive layer over the substrate;
a pixel circuit for each of the plurality of pixel regions, each pixel circuit comprising a pinned photodiode, a charge store, and a read out circuit for each pixel region, the optically sensitive layer being in electrical communication with a portion of a silicon diode, the optically sensitive layer and the silicon diode thereby forming the pinned photodiode; where, at a wavelength, the optically sensitive layer has an absorption length that is less than that of silicon, the photodetector, following experiencing annealing at 150° C. or greater for 1 minute or greater, achieves light detection with a signal-to-noise ratio greater than 1 upon illumination by less than or equal to 0.05 lux of visible-wavelength light.