Photoelectric conversion device, package structure therefor, and method of manufacturing photoelectric conversion device

1. A method of manufacturing a photoelectric conversion device, comprising:

a first step of forming a plurality of photoelectric conversion regions on a surface on one side of a semiconductor wafer;

a second step of preparing a light-blocking wafer having insertion openings, the insertion openings corresponding respectively to the photoelectric conversion regions, wherein the light-blocking wafer is a wafer formed from carbon or resin;

a third step of bonding the one-side surface of the semiconductor wafer and a surface on the opposite side to a surface on the one side of the light-blocking wafer to each other, in such a manner that the photoelectric conversion regions and the insertion openings correspond to each other, to form a bonded wafer body without an optical element;

a step of inserting an optical element into the insertion openings of the bonded wafer body; and

a step of bonding a reinforcement plate to a surface on the opposite side to the one-side surface of the semiconductor wafer or/and to the one-side surface of the light-blocking wafer, prior to the third step,

a fourth step of dividing the bonded wafer body in peripheries of the photoelectric conversion regions, to obtain bonded-body chips each having the photoelectric conversion region.

2. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein the light-blocking wafer is a wafer obtained by stacking and bonding a plurality of unit wafers each formed with the insertion openings and formed from carbon or resin, and the method comprises a step of inserting the optical element into the insertion opening prior to the third step.

3. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein that part of the light-blocking wafer at which the bonded wafer body is divided in the fourth step and which is adjacent to the insertion opening of the light-blocking wafer is formed, in the second step, with a hole penetrating the light-blocking wafer.

4. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein alignment between the semiconductor wafer and the light-blocking wafer is performed in the third step so that the photoelectric conversion regions of the semiconductor wafer and the insertion openings of the light-blocking wafer correspond to each other.

5. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein the one-side surface of the semiconductor wafer and the opposite-side surface of the light-blocking wafer are formed respectively with fitting sections for fitting between the semiconductor wafer and the light-blocking wafer, and the semiconductor wafer and the light-blocking wafer are fitted to each other in the third step.

6. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein prior to the step of inserting the optical elements, the optical elements are each provided with an aperture member which includes a light-transmitting aperture section permitting transmission of light therethrough and a light transmission restricting section restricting transmission of light through other region than the light-transmitting aperture section.

7. The method of manufacturing the photoelectric conversion device according to claim 1 , further comprising a step of inserting the optical element into the insertion opening prior to the fourth step, wherein

a light-blocking sheet is bonded to a surface on the one side of the light-blocking wafer after the insertion of the optical elements into the insertion openings, and the light-blocking sheet is an optical sheet which defines light transmission regions, the optical sheet including light-transmitting aperture sections which are formed correspondingly to the insertion openings of the light-blocking wafer and permitting transmission of light therethrough, and a light transmission restricting section which restricts transmission of light through other region than the light-transmitting aperture sections.

8. The method of manufacturing the photoelectric conversion device according to claim 1 , further comprising a step of inserting optical barrels each having the optical element held thereon into the insertion openings, before or after the fourth step.

9. The method of manufacturing the photoelectric conversion device according to claim 8 , wherein prior to the step of inserting the optical barrels into the insertion openings, the optical elements held in the optical barrels are each provided with an aperture member including a light-transmitting aperture section which permits transmission of light therethrough, and a light transmission restricting section which restricts transmission of light through other region than the light-transmitting aperture section.

10. The method of manufacturing the photoelectric conversion device according to claim 1 , further comprising a step of inserting optical barrels with the optical elements held therein into the insertion openings prior to the fourth step, wherein

a light-blocking sheet is bonded to a surface on the one side of the light-blocking sheet after the insertion of the optical barrels into the insertion openings, and

the light-blocking sheet is an optical sheet which defines light transmission regions, the optical sheet including light-transmitting aperture sections which are formed correspondingly to the insertion openings of the light-blocking wafer and permitting transmission of light therethrough, and a light transmission restricting section which restricts transmission of light through other region than the light-transmitting aperture sections.

11. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein the optical element includes an optical lens, the photoelectric conversion region is a light-receiving region, and the photoelectric conversion device is an imaging device.

12. The method of manufacturing the photoelectric conversion device according to claim 1 , wherein the optical element includes an optical lens, the photoelectric conversion region is a light-emitting region, and the photoelectric conversion device is a light-emitting device.

13. A package structure for a photoelectric conversion device, wherein in regard to a semiconductor wafer having a plurality of photoelectric conversion regions formed on a surface on one side thereof and a light-blocking wafer having insertion openings, wherein the insertion openings correspond respectively to the photoelectric conversion regions, wherein the light-blocking wafer is a wafer formed from carbon or resin and the one-side surface of the semiconductor wafer and a surface on the opposite side to the one side of the light-blocking wafer are bonded to each other to form a bonded wafer body without an optical element, wherein a reinforcement plate is bonded to a surface on the opposite side to the one-side surface of the semiconductor wafer and/or to the one-side surface of the light-blocking wafer, wherein an optical element is inserted into at least one insertion opening of the bonded wafer body, wherein the bonded wafer body is divided in peripheries of the photoelectric conversion regions to form bonded-body chips each having the photoelectric conversion region, and wherein the photoelectric conversion regions and the insertion openings correspond to each other.

14. A photoelectric conversion device comprising:

a package structure for the photoelectric conversion device, wherein in regard to a semiconductor wafer having a plurality of photoelectric conversion regions formed on a surface on one side thereof and a light-blocking wafer having insertion openings, wherein the insertion openings correspond respectively to the photoelectric conversion regions, wherein the light-blocking wafer is a wafer formed from carbon or resin and the one-side surface of the semiconductor wafer and a surface on the opposite side to the one side of the light-blocking wafer are bonded to each other to form a bonded wafer body without an optical element, wherein a reinforcement plate is bonded to a surface on the opposite side to the one-side surface of the semiconductor wafer and/or to the one-side surface of the light-blocking wafer, wherein an optical element is inserted into at least one insertion opening of the bonded wafer body, wherein the bonded wafer body is divided in peripheries of the photoelectric conversion regions to form bonded-body chips each having the photoelectric conversion region, and wherein the photoelectric conversion regions and the insertion openings correspond to each other.

15. The method of manufacturing the photoelectric conversion device according to claim 1 , further comprising curing a bonding material used to bond the light-blocking wafer and the semiconductor wafer by introducing Ultraviolet (UV) light into photoirradiation openings of the light-blocking wafer.