SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.
1 . A solar cell comprising:
a semiconductor substrate including a first conductive type;
a first amorphous silicon thin film layer disposed on the semiconductor substrate;
a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer,
wherein the first amorphous silicon thin film layer comprises:
a first intrinsic silicon thin film layer;
a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween; and
a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.
2 . The solar cell of claim 1 , further comprising:
a third amorphous silicon thin film layer facing the first amorphous silicon thin film while interposing the semiconductor substrate therebetween; and
a fourth amorphous silicon thin film layer including the first conductive type and facing the semiconductor substrate while interposing the third amorphous silicon thin film layer therebetween, and
wherein the third amorphous silicon thin film comprises:
a third intrinsic silicon thin film layer;
a fourth intrinsic silicon thin film layer disposed between the third intrinsic silicon thin film layer and the fourth amorphous silicon thin film layer; and
a second low concentration silicon thin film layer including the first conductive type and disposed between the third intrinsic silicon thin film layer and the fourth intrinsic silicon thin film layer.
3 . The solar cell of claim 2 , wherein a concentration of a dopant in each of the first low concentration silicon thin film layer and the second low concentration silicon thin film is lower than the second amorphous silicon thin film layer and the fourth amorphous silicon thin film layer.
4 . The solar cell of claim 3 , wherein the concentration of the dopant in each of the first low concentration silicon thin film layer and the second low concentration silicon thin film layer is in a range of about 5×10 18 atoms/cm 3 to about 5×10 20 atoms/cm 3 .
5 . The solar cell of claim 3 , wherein the concentration of the dopant in the fourth amorphous silicon thin film layer is higher than the semiconductor substrate.
6 . The solar cell of claim 5 , wherein
the semiconductor substrate comprises an n-type crystalline silicon,
the second amorphous silicon thin film layer comprises a p-type non-crystalline silicon,
the fourth amorphous silicon thin film layer comprises an n-type non-crystalline silicon,
the first low concentration silicon thin film layer comprises the p-type non-crystalline silicon, and
the second low concentration silicon thin film layer comprises the n-type non-crystalline silicon.
7 . The solar cell of claim 5 , wherein
the semiconductor substrate comprises a p-type crystalline silicon,
the second amorphous silicon thin film layer comprises an n-type non-crystalline silicon,
the fourth amorphous silicon thin film layer comprises a p-type non-crystalline silicon,
the first low concentration silicon thin film layer comprises the n-type non-crystalline silicon, and
the second low concentration silicon thin film layer comprises the p-type non-crystalline silicon.
8 . The solar cell of claim 2 , wherein each of the first low concentration silicon thin film layer and the second low concentration silicon thin film layer has a thickness in a range of about 5 angstroms to about 30 angstroms.
9 . The solar cell of claim 1 , further comprising:
a first conductive layer facing the first amorphous silicon thin film layer while interposing the second amorphous silicon thin film layer therebetween;
a first electrode electrically connected to the first conductive layer;
a second conductive layer facing a third amorphous silicon thin film layer while interposing a fourth amorphous silicon thin film layer therebetween; and
a second electrode electrically connected to the second conductive layer.
10 . A method of manufacturing a solar cell, the method comprising:
forming a first amorphous silicon thin film layer on a first surface of a semiconductor substrate including a first conductive type; and
forming a second amorphous silicon thin film layer including a second conductive type on the first amorphous silicon thin film layer,
wherein the forming a first amorphous silicon thin film layer comprises:
forming a first intrinsic silicon thin film layer on the first surface;
forming a first low concentration silicon thin film layer including the second conductive type on the first intrinsic silicon thin film layer; and
forming a second intrinsic silicon thin film layer on the first low concentration silicon thin film layer.
11 . The method of claim 10 , further comprising:
forming a third amorphous silicon thin film layer on a second surface opposite to the first surface; and
forming a fourth amorphous silicon thin film layer on the third amorphous silicon thin film layer,
wherein the forming a third amorphous silicon thin film layer comprises:
forming a third intrinsic silicon thin film layer on the second surface;
forming a second low concentration silicon thin film layer including the first conductive type on the third intrinsic silicon thin film layer; and
forming a fourth intrinsic silicon thin film layer on the second low concentration silicon thin film layer.
12 . The method of claim 11 , wherein
the first low concentration silicon thin film layer is doped with a first dopant in order to have a first dopant concentration,
the second low concentration silicon thin film layer is doped with a second dopant in order to have a second dopant concentration, and
each of the second and fourth amorphous silicon thin film layers is doped in order to have a higher dopant concentration than the first and second dopant concentrations.
13 . The method of claim 12 , wherein each of the first concentration and the second concentration is in a range of about 5×10 18 atoms/cm 3 to about 5×10 20 atoms/cm 3 .
14 . The method of claim 12 , wherein
the first amorphous silicon thin film layer is formed by providing at least one of a first reaction gas or a second reaction gas to a chemical vapor deposition apparatus,
the first reaction gas is provided to the chemical vapor deposition apparatus while the first intrinsic silicon thin film layer, the first low concentration silicon thin film layer and the second intrinsic silicon thin film layer are being formed, and
the second reaction gas is further provided to the chemical vapor deposition apparatus while the first low concentration silicon thin film layer is being formed.
15 . The method of claim 14 , wherein
the third amorphous silicon thin film layer is formed by providing at least one of the first reaction gas or a third reaction gas to the chemical vapor deposition apparatus,
the first reaction gas is provided to the chemical vapor deposition apparatus while the third intrinsic silicon thin film layer, the second low concentration silicon thin film layer and the fourth intrinsic silicon thin film layer are being formed, and
the third reaction gas is further provided to the chemical vapor deposition apparatus while the second low concentration silicon thin film layer is being formed.
16 . The method of claim 15 , wherein
the chemical vapor deposition apparatus is a plasma-enhanced chemical-vapor-deposition apparatus,
the semiconductor substrate is an n-type substrate,
the first reaction gas comprises a silane gas (SiH 4 ) and a hydrogen gas (H 2 ),
the second reaction gas comprises a p-type dopant,
the third reaction gas comprises an n-type dopant,
a flow ratio of the silane gas, the hydrogen gas and the second reaction gas provided to the chemical vapor deposition apparatus is about 100:400:1 when the first low concentration silicon thin film layer is being formed, and
a flow ratio of the silane gas, the hydrogen gas and the third reaction gas provided to the chemical vapor deposition apparatus is about 100:400:1 when the second low concentration silicon thin film layer is being formed.
17 . A method of manufacturing a solar cell, the method comprising:
forming a first amorphous silicon thin film layer on a semiconductor substrate including a first conductive type; and
forming a second amorphous silicon thin film layer including a second conductive type on the first amorphous silicon thin film layer,
wherein the forming a first amorphous silicon thin film layer comprises:
forming a source intrinsic silicon thin film layer on the semiconductor substrate;
injecting a dopant into the source intrinsic silicon thin film layer in order to separate the source intrinsic silicon thin film layer into a low concentration silicon thin film layer into which the dopant is injected and a first intrinsic silicon thin film layer disposed under the low concentration silicon thin film layer; and
forming a second intrinsic silicon thin film layer on the low concentration silicon thin film layer.
18 . The method of claim 17 , wherein the low concentration silicon thin film layer is doped to have a dopant concentration smaller than the second amorphous silicon thin film layer.
19 . The method of claim 18 , wherein the dopant concentration of the low concentration silicon thin film layer is in a range of about 5×10 18 atoms/cm 3 to about 5×10 20 atoms/cm 3 .