Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same
View Patent ↗Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.
1. A semiconductor light emitting diode comprising:
a first semiconductor layer;
an active layer formed on the first semiconductor layer;
a second semiconductor layer formed on the active layer:
a mask layer formed on the second semiconductor layer, the mask layer having a plurality of openings, and having a thickness thinner than that of the second semiconductor layer;
a third semiconductor layer, having a textured structure on an upper surface thereof, formed on a surface of the second semiconductor layer through the plurality of openings; and
a transparent electrode formed on the third semiconductor layer, having a textured structure on an upper surface thereof, and having a shape which corresponds to that of the textured structure of the third semiconductor layer,
wherein the first semiconductor layer is an n-type semiconductor layer and the second and third semiconductor layers are p-type semiconductor layers.
2. The semiconductor light emitting diode of claim 1 , wherein the mask layer is formed of a material that comprises Si x N y .
3. The semiconductor light emitting diode of claim 1 , wherein openings among the plurality of openings have irregular sizes and periods.
4. The semiconductor light emitting diode of claim 1 , wherein the third semiconductor layer is made of the same material as that of the second semiconductor layer.
5. The semiconductor light emitting diode of claim 1 , wherein light generated by the active layer is extracted to the outside through the transparent electrode.
6. The semiconductor light emitting diode of claim 1 , wherein at least a portion of an upper surface of the mask layer is covered with the third semiconductor layer.