Organic light-emitting display and method of manufacturing the same

1. An organic light-emitting display device, comprising:

as gate electrode formed on a substrate;

an interlayer insulating film formed on the substrate and covering the gate electrode, and comprising multiple layers having different refractive indices; and

a transparent electrode formed on the interlayer insulating film;

wherein the interlayer insulating film forms a resonance structure.

2. The organic light-emitting display device of claim 1 , further comprising as gate insulating film formed under the gate electrode and on the substrate, wherein the gate insulating film comprises multiple layers having different refractive indices.

3. The organic light-emitting display device of claim 2 , further comprising a buffer layer formed under the gate insulating film and on the substrate, wherein the buffer layer comprises multiple layers having different refractive indices.

4. The organic light-emitting display device of claim 1 , further comprising an inorganic film formed between the substrate and the transparent electrode, wherein the inorganic film comprises multiple layers having different refractive indices.

5. The organic light-emitting display device of claim 1 , further comprising, source and drain electrodes formed on the transparent electrode, wherein the transparent electrode is formed on the interlayer insulating film and in direct contact with the interlayer insulating film, and any one of the source and drain electrodes is formed on the transparent electrode and in direct contact with the transparent electrode.

6. The organic light emitting display device of claim 1 , further comprising:

an active layer formed between the gate electrode and the substrate, and comprising a source region and a drain region; and

source and drain electrodes formed on the transparent electrode and connected to the source and drain regions, respectively, through contact holes formed in the transparent electrode.

7. The organic light emitting display device of claim 1 , further comprising source and drain electrodes formed on top of the transparent electrode and connected to source and drain regions, respectively, through contact holes formed in the transparent electrode.

8. An organic light-emitting display device, comprising:

a buffer layer formed on an entire surface of substrate;

an active layer formed on the buffer layer and comprising a channel region and source and drain regions;

a gate insulating film formed on the active layer;

a gate electrode formed on the gate insulating film and overlapping the channel region;

an interlayer insulating film formed on the gate insulating film and covering the gate electrode, and comprising multiple layers having different refractive indices; and

a transparent electrode formed on the interlayer insulating film;

wherein the interlayer insulating film forms a resonance structure.

9. The organic light-emitting display device of claim 8 , further comprising source arid drain electrodes connected through contact holes to the source and drain regions, respectively, and formed on the transparent electrode.

10. The organic light-emitting display device of claim 9 , wherein any one of the source and drain electrodes is formed on the transparent electrode and in direct contact with the transparent electrode.

11. The organic light-emitting display device of claim 8 , wherein the buffer layer comprises multiple layers having different refractive indices.

12. The organic light-emitting display device of claim 8 , wherein the gate insulating film comprises multiple layers having different refractive indices.

13. The organic light-emitting display device of claim 8 , wherein the gate electrode has a multilayered structure comprising a first gate electrode film, a second gate electrode film and a third gate electrode film stacked sequentially.

14. The organic light-emitting display device of claim 13 , further comprising a capacitive first electrode formed on the buffer layer, and as capacitive second electrode formed on the gate insulating film, wherein a thickness of the capacitive second electrode is equal to a thickness of the first gate electrode film.

15. The organic light-emitting display device of claim 13 , wherein the first gate electrode film is narrower than the second gate electrode film and the third gate electrode film.

16. A method of manufacturing an organic light-emitting display device, the method comprising the steps of:

forming a gate electrode, on a substrate;

forming an interlayer insulating film on the substrate and covering the gate electrode, and comprising multiple layers having different refractive indices; and

forming a transparent electrode on the interlayer insulating film;

wherein the interlayer insulating film forms a resonance structure.

17. The method of claim 16 , further comprising the steps of forming an active layer on the substrate and forming a buffer layer under the active layer by stacking multiple layers having different refractive indices.

18. The method of claim 17 , further comprising the step of forming a gate insulating film on the substrate and the active layer by stacking multiple layers having different refractive indices.

19. A method of manufacturing an organic light-emitting display device, the method comprising the steps of:

forming a buffer layer on an entire surface of a substrate;

forming an active layer, which comprises a channel region and source and drain regions, on the buffer layer;

forming a gate insulating film on the active layer;

forming a gate electrode on the gate insulating film so as to overlap the channel region of the active layer;

forming an interlayer insulting film on the gate insulating film and covering the gate electrode, and comprising multiple layers having different refractive indices; and

forming a transparent electrode on the interlayer insulting film;

wherein the interlayer insulting film forms a resonance structure.

20. The method of claim 19 , wherein the step of forming the gate insulating film comprises stacking multiple layers having different refractive indices.

21. The method of claim 19 , wherein the step of forming the buffer layer comprises stacking multiple layers having different refractive indices.

22. The method of claim 19 , wherein the step of forming the active layer comprises forming a capacitive first electrode as the active layer on the substrate, and wherein the step of forming the gate insulating film comprises forming a capacitive second electrode as the gate electrode on the gate insulating film.

23. The method of claim 22 , wherein the step of forming the gate electrode and the capacitive second electrode comprises:

forming a multilayered conductive film by sequentially stacking, a first conductive film, a second conductive film, and a third conductive film on the gate insulating film;

forming a photosensitive film pattern, which comprises a first sub photosensitive film pattern corresponding to the gate electrode and a second sub photosensitive film pattern corresponding to the capacitive second electrode, on the third conductive film by using a halftone mask; and

etching the first thin third conductive films using the photosensitive film pattern as an etch mask.

24. The method of claim 23 , wherein the step of etching the first through third conductive films comprises:

etching the first through third conductive films using the first sub photosensitive film pattern and the second sub photosensitive film pattern as etch masks, and then removing the second sub photosensitive film pattern; and

etching the second conductive film and the third conductive film again using the remaining first sub photosensitive film pattern as an etch mask.

25. An organic light-emitting display device, comprising:

a buffer layer formed on an entire surface of a substrate;

an active layer formed on top of the buffer layer and comprising a channel region and source and drain regions;

a gate insulating film formed on top of the active layer;

a gate electrode formed on top of the gate insulating film and overlapping, the channel region, and having a multilayered structure including a gate electrode film;

an interlayer insulating film formed on top of the gate insulating film and covering the gate electrode;

a transparent electrode formed on top of the interlayer insulating film; and

a capacitive first electrode formed on top of the buffer layer, and a capacitive second electrode formed on top of the gate insulating film, wherein a thickness of the capacitive second electrode is equal to a thickness of the gate electrode film;

wherein the gate electrode has a multilayered structure comprising a first gate electrode film, a second gate electrode film and a third gate electrode film stacked sequentially.