Magnetic element having low saturation magnetization

1. A device comprising:

one or more magnetic memory cells, each one of the magnetic memory cells including:

a magnetic element including:

a first fixed layer having a fixed layer magnetization;

a first spacer layer that is nonmagnetic; and

a first free layer having a free layer magnetization that is changeable due to spin transfer when a write current above a threshold is passed through the first free layer;

the first spacer layer residing between the first fixed layer and the first free layer,

the first free layer including at least one ferromagnetic material and at least one nonmagnetic material, wherein the at least one nonmagnetic material is selected from a group consisting of W, Ti, V, and Hf to lower the threshold of the write current for the first free layer including the at least one nonmagnetic material compared to the first free layer not including the at least one nonmagnetic material; and

a circuit comprising at least an isolation transistor electrically connected to the magnetic element to control the write current through the magnetic element.

2. The device of claim 1 , wherein the ferromagnetic material of the first free layer includes at least one of Co, Ni, or Fe.

3. The device of claim 1 , wherein the ferromagnetic material of the first free layer includes at least one of alloy of CoNi, CoFe, NiFe, or CoNiFe.

4. The device of claim 1 , wherein the first free layer includes at least five atomic percent and less than or equal to fifty atomic percent W, Ti, V, or Hf.

5. The device of claim 1 , wherein the first spacer layer includes an insulating material.

6. The device of claim 5 , wherein the insulating material includes Al 2 O 3 or MgO.

7. The device of claim 1 , wherein the first spacer layer includes a conducting layer.

8. The device of claim 7 , wherein the conducting layer includes at least one of Ru, Re, Cu, Ta or Cu, and an alloy that includes Ru, Re, Cu, Ta or Cu.

9. The device of claim 1 , wherein the first fixed layer includes at least one ferromagnetic material and at least one nonmagnetic material, and the nonmagnetic material includes at least one of W, Ti, V, or Hf.

10. The device of claim 1 , wherein the magnetic element further comprises:

a second spacer layer that is nonmagnetic, the first free layer residing between the second spacer layer and the first spacer layer; and

a second fixed layer, the second spacer layer residing between the second fixed layer and the first free layer.

11. The device of claim 10 , wherein the first spacer layer includes an insulating material and the second spacer layer includes an insulating material.

12. The device of claim 10 , wherein the first spacer layer includes a conducting material and the second spacer layer includes an insulating material.

13. The device of claim 1 , wherein the magnetic element further comprises:

a first separation layer, the first free layer residing between the first spacer layer and the first separation layer;

a second free layer having a free layer magnetization that is changeable due to a magnetic field created by the first free layer, the first separation layer residing between the first free layer and the second free layer;

a second spacer layer that is nonmagnetic, the second free layer residing between the second spacer layer and the first separation layer; and

a second fixed layer having a fixed layer magnetization, the second spacer layer residing between the second fixed layer and the second free layer.

14. The device of claim 1 , comprising a plurality of the magnetic memory cells.

15. The device of claim 1 , further comprising:

a conductor line; and

a plurality of the magnetic memory cells, each magnetic memory cell being electrically connected to the conductor line to receive the write current.