Method of manufacturing vertical light emitting diode with dual surface pattern to improve light extraction
View Patent ↗A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.
1. A method for manufacturing a semiconductor light emitting diode (LED), the method comprising:
forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions;
removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions;
forming a protection layer on the first concavoconvex portion;
removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and
forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.
2. The method of claim 1 , wherein in the removing of a portion of the protection layer, only the convex portion of the first concavoconvex portion is exposed.
3. The method of claim 1 , wherein the size of the patterns of the second concavoconvex portion is smaller than that of the patterns of the first concavoconvex portion.
4. The method of claim 1 , wherein the removing of a portion of the protection layer is performed by one of chemical mechanical polishing (CMP), wet etching, and dry etching.
5. The method of claim 1 , wherein the removing of the substrate is performed through a laser lift-off process.
6. The method of claim 1 , wherein the protection layer comprises at least one of silicon oxide and silicon nitride.
7. The method of claim 1 , wherein the forming of the protection layer is performed by at least one of sputtering and a deposition process.
8. The method of claim 1 , wherein the forming of the second concavoconvex portion is performed through wet etching.
9. The method of claim 8 , wherein the wet etching is performed by using a KOH solution.
10. The method of claim 1 , further comprising: removing the protection layer remaining in a concave portion of the first concavoconvex portion after the forming of the second concavoconvex portion.
11. The method of claim 10 , wherein the removing of the protection layer remaining in the concave portion of the first concavoconvex portion is performed through a wet etching process using an HF solution.
12. The method of claim 1 , further comprising:
coating a photoresist on the surface of the protection layer to planarize the surface.
13. The method of claim 12 , wherein the removing of a portion of the protection layer is removing of the photoresist and a portion of the protection layer to expose the convex portion of the first concavoconvex portion.
14. The method of claim 12 , wherein the removing of the photoresist and a portion of the protection layer is performed through wet etching.