Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls
View Patent ↗Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.
1. A process for producing polycrystalline silicon product in a reactor comprising a reaction chamber and a distributor for evenly distributing gas into the reaction chamber, the reaction chamber comprising at least one reaction chamber wall, the distributor comprising a plurality of distribution openings which provide fluid communication between at least two sources of gas and the reaction chamber, each distribution opening having a channel portion and a flare-out portion and a throttle portion disposed between the channel portion and flare-out portion, the plurality of distribution openings comprising a plurality of peripheral openings and a plurality of central openings, the process comprising:
feeding a carrier gas and a thermally decomposable silicon compound from the sources of gas through the distribution openings of the distributor and into the reaction chamber, wherein the concentration of carrier gas in the gas fed through the peripheral openings exceeds the concentration of carrier gas in the gas fed through the central openings to reduce the amount of silicon which deposits on the reactor wall, the gasses passing through the channel portion, the throttle portion and the flare-out portion of the distribution openings; and
contacting silicon particles with the thermally decomposable silicon compound in the reaction chamber to cause silicon to deposit onto the silicon particles and increase in size.
2. The process of claim 1 wherein the gas fed through the peripheral openings consists essentially of carrier gas.
3. The process of claim 2 wherein the gas fed through the central openings consists essentially of thermally decomposable compounds.
4. The process of claim 1 wherein the thermally decomposable compound is selected from the group consisting of silane, trichlorosilane, and mixtures thereof.
5. The process of claim 4 wherein the thermally decomposable compound is silane.
6. The process of claim 1 wherein the carrier gas is selected from the group consisting of hydrogen, argon, helium and mixtures thereof.
7. The process of claim 6 wherein the carrier gas is hydrogen.
8. The process of claim 1 wherein the silicon particles increase in size to between about 800 μm and about 2000 μm in nominal diameter.
9. The process of claim 1 wherein a carrier gas and a thermally decomposable silicon compound are fed from a first source of gas and a second source of gas through the distribution openings of the distributor.
10. The process of claim 1 wherein the distributor comprises a plurality of cones, the flare-out portion being in fluid communication with the throttle portion of the distribution opening and the cone, the gasses passing through the flare-out portion and cones.
11. The process of claim 10 wherein the cones that are in fluid communication with the flare-out portion of the peripheral distribution openings open into the reaction chamber.