IP Library Granted Patent US 9,090,975
Granted Patent B2
US 9,090,975 · App. 13/164,305 · Granted Jul 28, 2015

Structuring three-dimensional components with non-diffusing noble or special metals and their alloys, with use being made of sputter technology

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Quick Facts
Patent No.
US 9,090,975
App. No.
13/164,305
Granted
Jul 28, 2015
Kind
B2
Abstract

One aspect is a method for the production of a three-dimensional structure of successive layers producing a multitude of successive layers wherein, with the exception of a first layer, each of the successive layers is arranged on a preceding layer. Each of the successive layers includes at least two materials wherein one material is a sacrificial material and one material is a structure material. Each of the successive layers defines a successive cross-section through the three-dimensional structure. Producing each of the layers includes depositing the sacrificial material by means of an electrochemical process and depositing the structure material by means of physical gas phase deposition. After a multitude of successive layers has been produced, the three-dimensional structure is uncovered by removing at least a part of the sacrificial material. The sacrificial material is at least one of a group consisting of nickel, silver, palladium, and gold.

Claims (34)

1. A method for the production of a three-dimensional structure of successive layers, comprising:

(A) producing a multitude of successive layers wherein, with the exception of a first layer, each of the successive layers is arranged on a preceding layer, wherein

each of the successive layers comprises at least two materials wherein one material is a sacrificial material and one material is a structure material,

each of the successive layers defines a successive cross-section through the three-dimensional structure,

producing each of the layers comprises the following steps:

I. depositing the sacrificial material by means of an electrochemical process,

II. depositing the structure material by means of physical gas phase deposition, wherein the structure material is a metal,

(B) after a multitude of successive layers has been produced, uncovering the three-dimensional structure by removing at least a part of the sacrificial material,

characterized in that

the sacrificial material is at least one of the group consisting of nickel, silver, palladium, and gold, and that the sacrificial material is selected such that it does not diffuse into the structure material when the structure material is deposited by the physical gas phase deposition.

2. The method according to claim 1 , characterized in that the structure material comprises a noble and/or platinum and/or refractory metal.

3. The method according to claim 1 , characterized in that the structure material comprises at least one of the following metals: platinum, platinum-iridium, tantalum, tantalum-tungsten, tantalum-niobium-tungsten, nickel, nickel-tantalum, nickel-tungsten, niobium and niobium-zirconium.

4. The method according to claim 3 , characterized in that the structure material comprises at least 50% by weight of one of the following metals: platinum, platinum-iridium, tantalum, tantalum-tungsten, tantalum-niobium-tungsten, nickel, nickel-tantalum, nickel-tungsten, niobium and niobium-zirconium.

5. The method according to claim 4 , characterized in that the successive layers are moved within the scope of depositing in steps I and/or II, in order to achieve a homogeneous composition of the structure material.

6. The method according to claim 1 , characterized in that, by means of physical gas phase deposition, at least two metals are deposited at the same time, wherein the two metals form an alloy as structure material.

7. The method according to claim 1 , characterized in that, during the physical gas phase deposition, use is made of gas flow sputtering and/or magnetron sputtering.

8. The method according to claim 1 , characterized in that the sacrificial material is deposited with a layer thickness between 10 μm and 50 μm.

9. The method according to claim 1 , characterized in that the sacrificial material is deposited with a layer thickness between 20 μm and 30 μm.

10. The method according to claim 1 , characterized in that the structure material comprises platinum and the sacrificial material comprises silver such that the metal completely prevents the sacrificial material from penetrating to the structure material during the physical gas phase deposition.

11. A method for the production of a three-dimensional structure of successive layers, comprising:

producing a multitude of successive layers;

wherein, with the exception of a first layer, each of the successive layers is arranged on a preceding layer;

wherein each of the successive layers comprises a sacrificial material and a structure material;

wherein each of the successive layers defines a successive cross-section through the three-dimensional structure;

wherein producing each of the layers comprises depositing the sacrificial material by means of an electrochemical process and depositing the structure material by means of physical gas phase deposition;

wherein the structure material is a metal; and

after a multitude of successive layers has been produced, uncovering the three-dimensional structure by removing at least a part of the sacrificial material;

wherein the sacrificial material is selected from a group consisting of nickel, silver, palladium, and gold and that the sacrificial material is selected such that it does not diffuse into the structure material when the structure material is deposited by the physical gas phase deposition.

12. The method according to claim 11 , characterized in that the structure material comprises a noble and/or platinum and/or refractory metal.

13. The method according to claim 11 , characterized in that the structure material comprises at least one of the following metals: platinum, platinum-iridium, tantalum, tantalum-tungsten, tantalum-niobium-tungsten, nickel, nickel-tantalum, nickel-tungsten, niobium and niobium-zirconium.

14. The method according to claim 11 , wherein at least two metals are deposited at the same time by means of physical gas phase deposition, and wherein the two metals form an alloy as structure material.

15. The method according to claim 11 , wherein use is made of gas flow sputtering and/or magnetron sputtering during the physical gas phase deposition.

16. The method according to claim 11 , wherein the sacrificial material is deposited with a layer thickness between 10 μm and 50 μm.

17. The method according to claim 11 , characterized in that each successive layer is moved in at least one of the three physical planes during the physical gas phase deposition of the structure material while the two metals are deposited at the same time such that the successive layers thus formed include a uniform and homogeneous composition.

Assignments (3)
CHANGE OF NAME Recorded Nov 6, 2015
From: HERAEUS PRECIOUS METALS GMBH & CO. KG
To: HERAEUS DEUTSCHLAND GMBH & CO. KG
Reel/Frame 037056/0430 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2014
From: W.C. HERAEUS GMBH & CO. KG
To: HERAEUS PRECIOUS METALS GMBH & CO. KG
Reel/Frame 032973/0477 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2011
From: SPECHT, HEIKO; REISINGER, ANDREAS; HAUSCH, ULRICH; KRUEGER, FRANK; TROETZSCHEL, JENS
To: W. C. HERAEUS GMBH
Reel/Frame 026821/0073 →