Semiconductor light emitting device
The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.
1. A semiconductor light emitting device comprising:
a substrate for element mounting;
a wiring formed on the substrate;
a reflector formed on the substrate having a cavity;
a diffusive reflection resin layer formed in the cavity and having at least one opening;
at least one light emitting diode (LED) element formed in the at least one opening, respectively, and electrically connected to the wiring;
a wavelength conversion structure formed on the diffusive reflection resin layer and sealed the at least one opening, wherein the wavelength conversion structure containing a phosphor material and converting a wavelength of light emitted by the at least one LED element,
an encapsulating resin layer formed in the cavity, wherein the encapsulating resin layer including a first portion and a second portion, wherein the first portion filled in the at least one opening and encapsulated the at least one LED element, wherein the second portion covers the wavelength conversion structure and the diffusive reflection resin layer;
wherein the at least one LED element including a light emitting region on a first surface facing the wavelength conversion layer,
wherein the diffusive reflection resin layer is formed from a cured material of a resin composition containing a transparent resin and an inorganic filler different in refractive index from the transparent resin, and a diffuse reflectance of the diffusive reflection resin layer is 80% or more at the wavelength of 430 nm, and
wherein the wavelength conversion structure is a phosphor plate and comprising a translucent ceramic, the translucent ceramic including a polycrystalline sintered body, and the phosphor plate having a sintered density of 99.0% or more, a total light transmittance of 40% or more in a visible light wavelength region excluding an excitation wavelength region, and a thickness of 100 μm to 1,000 μm.
2. The semiconductor light emitting device according to claim 1 , wherein an area of a surface of the wavelength conversion structure facing the at least one LED element is at least five times as large as an area of the light emitting region of the at least one LED element.
3. The semiconductor light emitting device according to claim 1 , wherein an area of a surface of the wavelength conversion structure facing the at least one LED element is at least twenty times as large as an area of the light emitting region of the at least one LED element.
4. The semiconductor light emitting device according to claim 1 , wherein the wavelength conversion structure comprises a single wavelength conversion layer or a laminate of a plurality of wavelength conversion layers.
5. The semiconductor light emitting device according to claim 4 , wherein each of the at least one LED element and the at least one opening are formed in plurality.
6. The semiconductor light emitting device according to claim 1 , wherein an area of a surface of the wavelength conversion structure facing the at least one LED element is at least twice as large as an area of the light emitting region of the at least one LED element.