IP Library Granted Patent US 8,323,361
Granted Patent B2
US 8,323,361 · App. 13/166,459 · Granted Dec 4, 2012

High voltage and high efficiency polymer electrolytic capacitors

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Quick Facts
Patent No.
US 8,323,361
App. No.
13/166,459
Granted
Dec 4, 2012
Kind
B2
Abstract

A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.

Claims (30)

1. A method for forming a capacitor comprising:

compressing tantalum powder into a tantalum anode wherein said tantalum anode comprises no more than 0.15 ppm/uC/g oxygen and no more than 50 ppm carbon;

anodizing said tantalum anode to form dielectric;

dipping said anodized anode into a slurry of conductive polymer;

drying said conductive polymer; and

providing a first external termination in electrical contact with said tantalum anode and a second external termination in electrical contact with said conductive polymer.

2. The method for forming a capacitor of claim 1 wherein said tantalum anode comprises no more than 0.1 ppm/uC/g oxygen.

3. The method for forming a capacitor of claim 1 wherein said tantalum anode comprises no more than 10 ppm carbon.

4. The method for forming a capacitor of claim 1 wherein said conductive polymer is selected from polyaniline, polypyrrole, polythiophene, and derivatives thereof.

5. The method for forming a capacitor of claim 4 wherein said conductive polymer is polyethyldioxythiophene.

6. The method for forming a capacitor of claim 1 wherein said slurry comprises polymeric particles with molecular weights of about 500 to about 10,000,000.

7. The method for forming a capacitor of claim 1 wherein said capacitor has a breakdown voltage of at least 60V.

8. The method for forming a capacitor of claim 7 wherein said capacitor has a breakdown voltage of at least 70V.

9. The method for forming a capacitor of claim 8 wherein said capacitor has a breakdown voltage of at least 100V.

10. The method for forming a capacitor of claim 9 wherein said capacitor has a breakdown voltage of at least 150V.

11. The method for forming a capacitor of claim 10 wherein said capacitor has a breakdown voltage of at least 200V.

12. The method for forming a capacitor of claim 1 wherein said capacitor has a ESR of no more than 150 mohms.

13. The method for forming a capacitor of claim 1 further comprising providing an anode wire in electrical contact with said anode.

14. The method for forming a capacitor of claim 13 wherein said anode wire is attached to said tantalum anode by welding in an inert atmosphere.

15. The method for forming a capacitor of claim 14 wherein said anode wire is tantalum.

16. The method for forming a capacitor of claim 1 further comprising applying a carbon layer between said conductive polymer and said second external termination.

17. The method for forming a capacitor of claim 1 further comprising applying a metallic coating between said carbon layer and said second external termination.

18. The method for forming a capacitor of claim 17 where the metallic coating comprises silver flake in an organic binder.

19. The method for forming a capacitor of claim 1 further comprising forming said dielectric to at least 100 V.

20. The method for forming a capacitor of claim 1 wherein said tantalum powder has a charge of no more than 30,000 CV/g.

21. The method for forming a capacitor of claim 1 further comprising at least partially encapsulating said capacitor in an organic molding.

22. The method for forming a capacitor of claim 1 further comprising hermetically sealing said capacitor in a metallic can.

23. The method for forming a capacitor of claim 22 wherein said second external termination is attached to said can.

24. The method for forming a capacitor of claim 1 wherein said dielectric is Ta 2 O 5 .

25. The method for forming a capacitor of claim 1 wherein said anode is sintered prior to said anodizing.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2011
From: FREEMAN, YURI; QIU, YONGJIAN; HUSSEY, STEVEN C.; LESSNER, PHILIP M.
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 026485/0659 →