IP Library Granted Patent US 8,173,546
Granted Patent B2
US 8,173,546 · App. 13/167,587 · Granted May 8, 2012

Etchant composition, patterning conductive layer and manufacturing flat panel, display device using the same

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Quick Facts
Patent No.
US 8,173,546
App. No.
13/167,587
Granted
May 8, 2012
Kind
B2
Abstract

An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Claims (19)

1. A method of patterning a conductive layer, the method comprising:

forming a first conductive layer on a substrate, wherein the conductive layer includes at least one of Al, Al alloy, and Mo;

patterning a photoresist layer by photo-exposure; and

etching the conductive layer using the patterned photoresist layer as an etch mask;

wherein an etchant composition used to etch the conductive layer includes a phosphoric acid, nitric acid of about 2 weight % to about 5 weight %; an acetic acid, an acetate compound, and water.

2. The method according to claim 1 , wherein the composition includes phosphoric acid of about 50 weight % to about 77 weight %; acetic acid of about 1 weight % to about 25 weight %; an acetate compound of about 1 weight % to about 10 weight %; and water of residual quantity.

3. The method according to claim 2 , wherein the acetate compound includes at least one of cation of sodium (Na), potassium (K), ammonia (NH3), calcium (Ca), aluminum (Al).

4. The method according to claim 2 , wherein the acetate compound is an acid salt.

5. A method of manufacturing a flat panel display device, the method comprising:

providing a substrate;

forming a first conductive layer on the substrate;

patterning the first conductive layer to form a gate line and a gate electrode;

forming a semiconductor layer on the substrate corresponding to the gate electrode;

forming a second conductive layer on the semiconductor layer;

patterning the second conductive layer to form source/drain electrodes;

wherein the gate electrode and the source/drain electrodes are patterned using one etchant composition including phosphoric acid, nitric acid of about 2 weight % to about 5 weight %; an acetic acid, an acetate compound, and water.

6. The method according to claim 5 , wherein the etchant composition includes phosphoric acid of about 50 weight % to about 77 weight %; an acetic acid of about 1 weight % to about 25 weight %; an acetate compound of about 1 weight % to about 10 weight %; and water of residual quantity.

7. The method according to claim 6 , wherein the acetate compound includes at least one of cation of sodium (Na), potassium (K), ammonia (NH3), calcium (Ca), aluminum (Al).

8. The method according to claim 7 , wherein the acetate compound is an acid salt.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029016/0026 →