Thin-film transistor and method of manufacturing the same
View Patent ↗A thin-film transistor (TFT) and a method of manufacturing the same are disclosed herein. The TFT may include a gate electrode disposed on an insulating substrate, an insulating layer disposed on the insulating substrate and the gate electrode, an active layer pattern disposed on the insulating layer to overlap the gate electrode, a source electrode disposed on the insulating layer and at least part of which overlaps the active layer pattern, and a drain electrode which is separated from the source electrode and at least part of which overlaps the active layer pattern. A first ohmic contact layer pattern may be disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode. The first ohmic contact layer may have higher nitrogen content on its surface than in other portions of the first ohmic contact layer.
1. A thin-film transistor (TFT), comprising:
a gate electrode disposed on a substrate;
an insulating layer disposed on the substrate and the gate electrode;
an active layer pattern disposed on the insulating layer, the active layer pattern overlapping the gate electrode;
a source electrode disposed on the insulating layer and overlapping at least part of the active layer pattern;
a drain electrode disposed on the insulating layer, spaced apart from the source electrode, and overlapping at least part of the active layer pattern; and
a first ohmic contact layer pattern disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode,
wherein the first ohmic contact layer comprises a nitride layer and a non-nitride layer, the nitride layer being disposed on the non-nitride layer within the first ohmic contact layer.
2. The TFT of claim 1 , wherein the source electrode and the drain electrode each comprise at least one layer, the at least one layer comprising two or more metals, a lowest layer of the at least one layer comprising Titanium (Ti).
3. The TFT of claim 1 , wherein the source electrode and the drain electrode comprise a Titanium (Ti) layer and a Copper (Cu) layer, and
wherein the Ti layer and the Cu layer are sequentially stacked.
4. The TFT of claim 1 , further comprising a second ohmic contact layer pattern disposed on the first ohmic contact layer pattern.
5. The TFT of claim 2 , wherein a thickness of the Ti layer is smaller than 100 Å.
6. The TFT of claim 5 , wherein the thickness of the Ti layer is greater than 10 Å.
7. A thin-film transistor (TFT), comprising:
an ohmic contact layer pattern disposed between an active layer pattern and a source electrode and between the active layer pattern and a drain electrode; and
a diffusion-preventing layer pattern disposed between a first portion of the ohmic contact layer pattern and a portion of the source electrode and between a second portion of the ohmic contact layer pattern and a portion of the drain electrode,
wherein the ohmic contact layer pattern and the diffusion-preventing layer pattern have substantially the same pattern, and
wherein the diffusion-preventing layer comprises a titanium layer of the source electrode, a titanium layer of the drain electrode, and a nitride layer of the ohmic contact layer pattern.
8. The TFT of claim 7 , further comprising:
a gate electrode; and
an insulating layer disposed between the gate electrode and the active layer pattern,
wherein the source electrode is disposed corresponding to a first portion of the active layer pattern, and
wherein the drain electrode is disposed corresponding to a second portion of the active layer pattern, the drain electrode being spaced apart from the source electrode.
9. The TFT of claim 7 , wherein the ohmic contact layer pattern and the diffusion-preventing layer pattern have substantially the same pattern as the active layer pattern except in a channel region of the active layer pattern.
10. The TFT of claim 7 , wherein a thickness of the diffusion-preventing layer pattern is between 10 Å and 100 Å.