IP Library Granted Patent US 8,575,052
Granted Patent B2
US 8,575,052 · App. 13/168,254 · Granted Nov 5, 2013

Dielectric ceramic, method for producing dielectric ceramic, and electronic component

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Quick Facts
Patent No.
US 8,575,052
App. No.
13/168,254
Granted
Nov 5, 2013
Kind
B2
Abstract

Provided is a dielectric ceramic that includes a main component which contains Mg 2 SiO 4 and additives which contain a zinc oxide and a glass component, in which, in X-ray diffraction. The peak intensity ratio, I B /I A , of the X-ray diffraction peak intensity I B of zinc oxide remaining unreacted, for which 2θ is between 31.0° and 32.0° and between 33.0° and 34.0°, with respect to the peak intensity I A of Mg 2 SiO 4 as the main phase, for which 2θ is between 36.0° and 37.0°, is 10% or less. The dielectric ceramic has a relative density of 96% or greater.

Claims (36)

1. A dielectric ceramic comprising:

a main component which contains Mg 2 SiO 4 ; and

additives which contain a zinc oxide, a boron oxide, an alkaline earth metal oxide, and a glass component,

wherein:

in X-ray diffraction, a peak intensity ratio I B /I A is 10% or less where I A is an X-ray diffraction peak intensity of Mg 2 SiO 4 as a main phase for which 2θ is between 36.0° and 37.0° and I B is an X-ray diffraction peak intensity of unreacted zinc oxide for which 2θ is between 31.0° and 32.0° and between 33.0° and 34.0°,

the glass component is SiO 2 —BaO—CaO—Li 2 O glass,

a content of the zinc oxide, as determined by calculating a mass of the zinc oxide relative to ZnO, is from 8.0 parts by mass to 20 parts by mass relative to 100 parts by mass of the main component,

a content of the glass component, as determined by calculating a mass of the glass component relative to SiO 2 —BaO—CaO—Li 2 O glass, is from 2.0 parts by mass to 10.0 parts by mass relative to 100 parts by mass of a dielectric composition having all the same additives but without the glass component,

a content of the boron oxide, as determined by calculating a mass of the boron oxide relative to B 2 O 3 , is from 3.0 parts by mass to 10.0 parts by mass relative to 100 parts by mass of the main component,

a content of the alkaline earth metal oxide, as determined by calculating a mass of the alkaline earth metal oxide relative to RO, where R represents an alkaline earth metal element, is from 1.0 parts by mass to 4.0 parts by mass relative to 100 parts by mass of the main component, and

the dielectric ceramic has a relative density of 96% or greater.

2. The dielectric ceramic according to claim 1 , wherein the content of the zinc oxide is from 10 parts by mass to 16 parts by mass.

3. An electronic component comprising a dielectric layer formed of the dielectric ceramic according to claim 1 .

4. A dielectric ceramic comprising:

a main component which contains Mg 2 SiO 4 ; and

additives which contain a zinc oxide, a glass component, a boron oxide, an alkaline earth metal oxide, and at least one of an aluminum oxide and a titanium oxide, wherein:

the glass component is SiO 2 —BaO—CaO—Li 2 O glass,

a content of the zinc oxide, as determined by calculating a mass of the zinc oxide relative to ZnO, is from 8.0 parts by mass to 20 parts by mass relative to 100 parts by mass of the main component,

a content of the glass component, as determined by calculating a mass of the glass component relative to SiO 2 —BaO—CaO—Li 2 O glass, is from 2.0 parts by mass to 10.0 parts by mass relative to 100 parts by mass of a dielectric composition having all the same additives but without the glass component,

a content of the boron oxide, as determined by calculating a mass of the boron oxide relative to B 2 O 3 , is from 3.0 parts by mass to 10.0 parts by mass relative to 100 parts by mass of the main component,

a content of the alkaline earth metal oxide, as determined by calculating a mass of the alkaline earth metal oxide relative to RO, where R represents an alkaline earth metal element, is from 1.0 parts by mass to 4.0 parts by mass relative to 100 parts by mass of the main component,

a content of the aluminum oxide, as determined by calculating a mass of the aluminum oxide relative to Al 2 O 3 , is from 0.1 parts by mass to 10.0 parts by mass relative to 100 parts by mass of the main component, and

a content of the titanium oxide, as determined by calculating a mass of the titanium oxide relative to TiO 2 , is from 0.1 parts by mass to 10.0 parts by mass relative to 100 parts by mass of the main component.

5. The dielectric ceramic according to claim 4 , wherein the content of the zinc oxide is from 10 parts by mass to 16 parts by mass.

6. An electronic component comprising a dielectric layer formed of the dielectric ceramic according to claim 4 .

7. A method for producing the dielectric ceramic of claim 1 , the method comprising:

a dielectric ceramic composition production process that includes mixing a raw material powder of magnesium oxide and a raw material powder of silicon dioxide, heat treating the mixture to produce an Mg 2 SiO 4 crystal powder, adding the zinc oxide and the glass component as additive raw material powders to the Mg 2 SiO 4 crystal powder, and thereby obtaining a dielectric ceramic composition; and

a firing process that includes firing the dielectric ceramic composition at a temperature of from 800° C. to 1000° C. in an oxygen atmosphere, and thereby obtaining a sintered body,

wherein:

in X-ray diffraction, a peak intensity ratio I B /I A is 10 % or less where IA is an X-ray diffraction peak intensity of Mg 2 SiO 4 as a main phase of the sintered body for which 2θ is between 36.0° and 37.0° and I B is an X-ray diffraction peak intensity of zinc oxide remaining unreacted for which 2θ is between 31.0 ° and 32.0 ° and between 33.0° and 34.0°, and

the dielectric ceramic has a relative density of 96% or greater.

8. The method for producing a dielectric ceramic according to claim 7 , wherein a content of the zinc oxide is from 10 parts by mass to 16 parts by mass.

9. A method for producing the dielectric ceramic of claim 4 , the method comprising:

a dielectric ceramic composition production process that includes mixing a raw material powder of magnesium oxide and a raw material powder of silicon dioxide, heat treating the mixture to produce an Mg 2 SiO 4 crystal powder, adding the at least one of the aluminum oxide and the titanium oxide, the zinc oxide and the glass component as additive raw material powders to the Mg 2 SiO 4 crystal powder, and thereby obtaining a dielectric ceramic composition; and

a firing process that includes firing the dielectric ceramic composition at a temperature of from 800° C. to 1000° C. in an oxygen atmosphere, and thereby obtaining a sintered body.

10. The method for producing a dielectric ceramic according to claim 9 , wherein a content of the zinc oxide is from 10 parts by mass to 16 parts by mass.

Assignments (2)
CHANGE OF ADDRESS Recorded Jun 12, 2013
From: TDK CORPORATION
To: TDK CORPORATION
Reel/Frame 030651/0687 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 24, 2011
From: SAKURAI, TOSHIO; ARASHI, TOMOHIRO; KOBUKE, HISASHI; NAKANO, TAKAHIRO; NAKAMURA, TOMOKO; MIYAUCHI, YASUHARU
To: TDK CORPORATION
Reel/Frame 026514/0130 →