Electronic device, resonator, oscillator and method for manufacturing electronic device
View Patent ↗An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
1. An electronic device comprising a substrate having a functional structural body provided in an inside of a cavity part and a CMOS circuit part placed side by side on the substrate, wherein
a covering structure for defining the cavity part is provided with a side wall; and a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
2. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured by a part of the first covering layer in a thickness direction thereof.
3. The electronic device according to claim 1 , wherein the corrosion-resistant layer is composed of TiN, Ti, W, Au, Pt or an alloy thereof.
4. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in an uppermost layer of the first covering layer.
5. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in a lowermost layer of the first covering layer.
6. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of layers provided in an uppermost layer and a lowermost layer of the first covering layer.
7. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part.
8. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer, a Ti layer and a TiN layer are laminated in this order from a surface facing at the cavity part.
9. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer, a Ti layer and a TiN layer are laminated in this order from a surface facing at the cavity part.
10. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part.
11. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from a surface facing at the cavity part.
12. The electronic device according to claim 1 , wherein the side wall further includes an interlayer insulating layer and a wiring layer, the interlayer insulating layer and the wiring layer being a part of interlayer insulating layers and wiring layers of the functional structural body and the CMOS circuit part.