Thin-film transistor substrate, method of manufacturing the same and display apparatus having the same
View Patent ↗In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.
1. A thin-film transistor (TFT) substrate comprising:
a substrate;
a gate electrode formed on the substrate and electrically connected to a gate line;
a gate insulating layer formed on the substrate to cover the gate line and the gate electrode;
a semiconductor layer formed on the gate insulating layer corresponding to the gate electrode;
a source electrode formed on the semiconductor layer and electrically connected to a data line formed on the gate insulating layer in a direction crossing a longitudinal direction of the gate line;
a drain electrode formed on the semiconductor layer opposite to the source electrode to define a channel area of the semiconductor layer between the source and drain electrodes;
an organic layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the data line, the organic layer having a first opening exposing the channel area;
an inorganic insulating layer formed on the organic layer and an inner surface of the first opening, the inorganic insulating layer having a substantially uniform thickness; and
a pixel electrode disposed on the inorganic insulating layer and contacting the drain electrode through a contact hole formed through both the organic layer and the inorganic insulating layer.
2. The TFT substrate of claim 1 , further comprising a storage electrode formed of material from a same layer as that from which the gate line is formed, and wherein the organic layer has a second opening exposing a portion of the gate insulating layer disposed on the storage electrode.
3. The TFT substrate of claim 2 , wherein the inorganic insulating layer is formed on an inner side surface of the second opening and the gate insulating layer exposed through the second opening.
4. The TFT substrate of claim 2 , further comprising at least one spacer disposed at and filling up at least one of the first and second openings.
5. The TFT substrate of claim 4 , wherein the spacer includes a light blocking material.
6. The TFT substrate of claim 2 , further comprising a light blocking filler disposed at and filling up at least one of the first and second openings.
7. The TFT substrate of claim 1 , wherein the pixel electrode is not present in the first opening.
8. The TFT substrate of claim 7 , wherein the pixel electrode has an incision pattern dividing one pixel part into a plurality of domains.