Granted Patent B1

US 8,493,695 · App. 13/170,506 · Granted Jul 23, 2013

Abstract

Claims (39)

1. A magnetic read transducer comprising:

a magnetoresistive sensor including a pinned layer, a spacer layer, and a free layer, the spacer layer being nonmagnetic and residing between the pinned layer and the free layer;

a shield, the free layer residing between the pinned layer and the shield; and

a spin pumping barrier layer between the shield and the free layer, wherein the spin pumping barrier layer includes at least one of aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, Si, Ge, ZnSe, Ta, and copper oxide.

2. The magnetic read transducer of claim 1 wherein the spin pumping barrier layer is a non-spin flip scattering layer.

3. The magnetic read transducer of claim 1 wherein the spin pumping barrier layer is a tunneling barrier layer.

4. The magnetic read transducer of claim 3 wherein the spin pumping barrier layer has a thickness not more than twenty-five Angstroms.

5. The magnetic read transducer of claim 4 wherein the thickness is at least five and not more than fifteen Angstroms.

6. The magnetic read transducer of claim 1 wherein the spin pumping barrier layer includes amorphous MgO.

7. The magnetic read transducer of claim 1 wherein the magnetoresistive sensor has a first resistance area product (RA) and the spin pumping barrier layer has a second RA not more than twenty percent of the first RA.

8. The magnetic read transducer of claim 7 wherein the second RA is at least 0.1 mΩ-μm 2 and not more than ten percent of the first RA.

9. The magnetic read transducer of claim 8 wherein the second RA is at least 10 mΩ-μm 2 .

10. The magnetic read transducer of claim 9 wherein the second RA is not more than 100 mΩ-μm 2 .

11. The magnetic read transducer of claim 1 further comprising:

a capping layer residing between the free layer and the shield.

12. The magnetic read transducer of claim 11 wherein the spin pumping barrier layer is between the capping layer and the free layer.

13. The magnetic read transducer of claim 12 wherein the spin pumping barrier layer adjoins the free layer.

14. The magnetic read transducer of claim 11 wherein the capping layer is between the spin pumping barrier layer and the free layer.

15. The magnetic read transducer of claim 11 wherein the spin pumping barrier layer resides within the capping layer.

16. A magnetic read transducer comprising:

a first shield;

a magnetoresistive sensor including a pinned layer, a spacer layer, and a free layer, the spacer layer being a first tunneling barrier layer and residing between the pinned layer and the free layer, the magnetoresistive sensor having a first resistance area product (RA);

a second tunneling barrier layer adjoining the free layer, the free layer residing between the second tunneling barrier layer and the first tunneling barrier layer, the second tunneling barrier having a thickness of at least five and not more than fifteen Angstroms, the second tunneling barrier layer including MgO, the second tunneling barrier layer having a second RA not more than twenty percent of the first RA, the second RA being at least 10 mΩ-μm 2 and not more than 100 mΩ-μm 2 , wherein the spin pumping barrier layer includes at least one of aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, Si, Ge, ZnSe, Ta, and copper oxide;

a capping layer adjoining the second tunneling barrier layer, the second tunneling barrier layer residing between the capping layer and the free layer; and

a second shield, the capping layer residing between the free layer and the second shield.

17. A magnetic recording disk comprising:

a media;

a slider;

a read transducer coupled with the slider, the read transducer including a magnetoresistive sensor, a shield, and a spin pumping barrier layer, the magnetoresistive sensor including a pinned layer, a spacer layer, and a free layer, the spacer layer being nonmagnetic and residing between the pinned layer and the free layer, the free layer residing between the pinned layer and the shield, the spin pumping barrier layer residing between the shield and the free layer, the spin pumping barrier layer including at least one of aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, Si, Ge, ZnSe, Ta, and copper oxide.

18. The disk drive of claim 17 wherein the spin pumping barrier layer is a tunneling barrier layer.

19. The disk drive of claim 18 wherein the spin pumping barrier layer has a thickness of at least five and not more than ten Angstroms.

20. The disk drive of claim 17 wherein the magnetoresistive sensor has a first resistance area product (RA) and the spin pumping barrier layer has a second RA not more than twenty percent of the first RA.

21. The disk drive of claim 17 further comprising:

a capping layer residing between the free layer and the shield.

22. The disk drive of claim 21 wherein the spin pumping barrier layer is between the capping layer and the free layer and wherein the spin pumping barrier layer adjoins the free layer.

23. A method for fabricating a magnetoresistive structure for use in a magnetic transducer, the method comprising:

providing a magnetoresistive sensor including a pinned layer, a spacer layer, and a free layer, the spacer layer being nonmagnetic and residing between the pinned layer and the free layer;

a spin pumping barrier layer, the spin pumping barrier layer including at least one of aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, Si, Ge, ZnSe, Ta, and copper oxide;

providing a shield, the free layer residing between the pinned layer and the shield, the spin pumping barrier layer being between the shield and the free layer.

Assignments (9)