Semiconductor device and method of manufacturing semiconductor device
A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed above the first gate insulating film, and first source/drain regions of a second conduction type formed in the first epitaxial semiconductor layer and in the semiconductor substrate in the first region. A second transistor includes a second impurity layer of the first conduction type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and being thinner than the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer, a second gate electrode formed above the second gate insulating film, and second source/drain regions of the second conduction type formed in the second epitaxial semiconductor layer and in the semiconductor substrate in the second region.
1. A method of manufacturing a semiconductor device comprising:
ion implanting a first impurity of a first conduction type in a first region and a second region of a semiconductor substrate to form a first impurity layer in the first region and the second region;
epitaxially growing a semiconductor layer above the semiconductor substrate after ion implanting the first impurity;
forming above the semiconductor layer a mask exposing the first region and covering the second region;
removing partially the semiconductor layer in the first region by using the mask;
removing the mask after removing partially the semiconductor layer;
forming a first gate insulating film above the semiconductor layer after removing the mask;
forming a first gate electrode on the first gate insulating film in the first region and a second gate electrode above the first gate insulating film in the second region;
forming a first source region and a first drain region in the semiconductor layer in the first region; and
forming a second source region and a second drain region in the semiconductor layer in the second region.
2. The method of manufacturing a semiconductor device according to claim 1 ,
further comprising,
before growing the semiconductor layer, ion implanting a second impurity of a second conduction type in a third region and a fourth region of the semiconductor substrate to form a second impurity layer in the third region and the fourth region; and
after forming the first gate electrode and the second electrode,
forming a third source region and a third drain region in the semiconductor layer in the third region; and
forming a fourth source region and a fourth drain region in the semiconductor layer in the fourth region, wherein
in forming the mask, the mask exposing the first region and the third region and covering the second region and the fourth region is formed above the semiconductor layer,
in removing partially the semiconductor layer, the semiconductor layer is removed partially in the first region and the third region by using the mask,
in forming the first gate electrode and the second gate electrode, a third gate electrode is further formed above the first gate insulating film in the third region and a fourth gate electrode is further formed above the first gate insulating film in the fourth region.
3. The method of manufacturing a semiconductor device according to claim 1 ,
further comprising,
before growing the semiconductor layer, ion implanting a third impurity of the first conduction type in a fifth region of the semiconductor substrate to form a third impurity layer in the fifth region; and
after forming the first gate electrode and the second electrode, forming a fifth source region and a fifth drain region in the semiconductor layer in the fifth region, wherein
in forming the mask, the mask further exposing the fifth region is formed above the semiconductor layer,
in removing partially the semiconductor layer, the semiconductor layer in the fifth region is further removed partially by using the mask,
in forming the first gate insulating film, a second gate insulating film which is different in the film thickness from the first gate insulating film is further formed above the semiconductor layer in the fifth region,
in forming the first gate electrode and the second gate electrode, a fifth gate electrode is further formed above the second gate insulating film in the fifth region.
4. The method of manufacturing a semiconductor device according to claim 2 ,
further comprising,
before growing the semiconductor layer, ion implanting a third impurity of the first conduction type in a fifth region of the semiconductor substrate to form a third impurity layer in the fifth region; and
after forming the first gate electrode and the second electrode, forming a fifth source region and a fifth drain region in the semiconductor layer in the fifth region, wherein
in forming the mask, the mask further exposing the fifth region is formed above the semiconductor layer,
in removing partially the semiconductor layer, the semiconductor layer in the fifth region is further removed partially by using the mask,
in forming the first gate insulating film, a second gate insulating film which is different in the film thickness from the first gate insulating film above the semiconductor layer in the fifth region,
in forming the first gate electrode and the second gate electrode, a fifth gate electrode is further formed above the second gate insulating film in the fifth region.
5. The method of manufacturing a semiconductor device according to claim 4 ,
further comprising,
before growing the semiconductor layer, ion implanting a fourth impurity of the second conduction type in a sixth region of the semiconductor substrate to form a fourth impurity layer in the sixth region; and
after forming the first gate electrode and the second electrode, forming a sixth source region and a sixth drain region in the semiconductor layer in the sixth region, wherein
in forming the mask, the mask further exposing the sixth region is formed above the semiconductor layer,
in removing partially the semiconductor layer, the semiconductor layer in the sixth region is further removed partially by using the mask,
in forming the first gate insulating film, the second gate insulating film is further formed above the semiconductor layer in the sixth region,
in forming the first gate electrode and the second gate electrode, a sixth gate electrode is further formed above the second gate insulating film in the sixth region.
6. The method of manufacturing a semiconductor device according to claim 3 , wherein
forming the first gate insulating film and the second gate insulating film includes:
thermally oxidizing the semiconductor layer to form an oxide film above the surface of the semiconductor layer;
removing the oxide film in the first gate insulating film forming region; and
thermally oxidizing the surface of the semiconductor layer to form the first gate insulating film and to form the second gate insulating film of the oxide film further oxidized.
7. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
after removing partially the semiconductor layer and before forming the first gate insulating film, forming a device isolation insulating film.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein
a thickness of the semiconductor layer in the first region is thinner than a thickness of the semiconductor layer in the second region after removing partially the semiconductor layer in the first region.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor layer is a non-doped semiconductor layer.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor layer is an epitaxial silicon layer.
11. The method of manufacturing a semiconductor device according to claim 1 , wherein
the first source region and the first drain region are formed in the semiconductor layer and the first impurity layer, and
the second source region and the second drain region are formed in the semiconductor layer and the first impurity layer.