IP Library Granted Patent US 8,506,828
Granted Patent B1
US 8,506,828 · App. 13/171,242 · Granted Aug 13, 2013

Method and system for providing a magnetic recording transducer using an ion beam scan polishing planarization

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Quick Facts
Patent No.
US 8,506,828
App. No.
13/171,242
Granted
Aug 13, 2013
Kind
B1
Abstract

A method and system for fabricating a read sensor on a substrate for a read transducer is described. A read sensor stack is deposited on the substrate. A mask is provided on the on the read sensor stack. The mask has a pattern that covers a first portion of the read sensor stack corresponding to the read sensor, covers a second portion of the read sensor stack distal from the read sensor, and exposes a third portion of the read sensor stack between the first and second portions. The read sensor is defined from the read sensor stack. A hard bias layer is deposited. An aperture free mask layer including multiple thicknesses is provided. A focused ion beam scan (FIBS) polishing step is performed on the mask and hard bias layers to remove a portion of the mask and hard bias layers based on the thicknesses.

Claims (39)

1. A method for fabricating a read sensor on a substrate for a read transducer, the method comprising:

depositing a read sensor stack including a plurality of layers on the substrate;

providing a mask on the on the read sensor stack, the mask having a pattern, the pattern covering a first portion of the read sensor stack corresponding to the read sensor, covering a second portion of the read sensor stack distal from the read sensor, and exposing a third portion of the read sensor stack between the first portion and the second portion of the read sensor stack;

defining the read sensor from the read sensor stack, the defining the read sensor including removing the third portion of the read sensor stack;

depositing a hard bias layer;

providing a mask layer including a plurality thicknesses, the mask layer being aperture free;

focused ion beam scan (FIBS) polishing the mask layer and the hard bias layer to remove a portion of the mask layer and a portion of the hard bias layer based on the plurality of thicknesses, the step of polishing the mask layer and the hard bias layer further including:

performing the ion polishing at a polishing angle such that a first removal rate for the mask layer is substantially equal to a second removal rate for the portion of the hard bias layer.

2. The method of claim 1 wherein the mask layer has a substantially flat top surface.

3. The method of claim 1 further comprising:

depositing an insulating layer on the read sensor before the step of depositing the hard bias layer.

4. The method of claim 1 wherein the step of providing the mask further includes:

depositing a hard mask layer;

providing a photoresist mask having a photoresist mask pattern on the hard mask layer; and

transferring the photoresist mask pattern to the hard mask layer, forming a hard mask having the pattern.

5. The method of claim 1 further comprising:

removing a remaining portion of the mask after the step of performing the FIBS polishing.

6. The method of claim 1 wherein the mask layer includes photoresist.

7. The method of claim 1 wherein the step of performing the FIBS polishing further includes:

measuring at least a portion of the plurality of thicknesses across the substrate;

scanning across the substrate while ion polishing such that the ion polishing removes a greater amount of at least one of the mask layer and the hard bias layer for a greater thickness of the plurality of thicknesses.

8. The method of claim 7 wherein the step of scanning further includes:

making multiple passes across at least a portion of the substrate.

9. The method of claim 7 wherein the step of scanning further includes:

performing the ion polishing for a longer time for the greater thickness of the plurality of thicknesses.

10. A method for fabricating a read sensor on a substrate for a read transducer, the method comprising:

depositing a read sensor stack including a plurality of layers on the substrate;

depositing a hard mask layer on the read sensor stack;

providing a photoresist mask having a photoresist mask pattern on the hard mask layer;

transferring the photoresist mask pattern to the hard mask layer, forming a hard mask having a pattern, the pattern covering a first portion of the read sensor stack corresponding to the read sensor, covering a second portion of the read sensor stack distal from the read sensor, and exposing a third portion of the read sensor stack between the first portion and the second portion of the read sensor stack; ion milling the read sensor stack, thereby removing the third portion of the read sensor stack and defining the read sensor from the read sensor stack;

depositing an insulating layer on the read sensor;

depositing a hard bias layer after the step of depositing the insulating layer;

providing a mask layer including a substantially flat top surface and a plurality of thicknesses, the mask layer consisting of photoresist and being aperture free;

focused ion beam scan (FIBS) polishing the mask layer and the hard bias layer to remove a portion of the mask layer and a portion of the hard bias layer based on the plurality of thicknesses, the step of performing the FIBS polishing further including

measuring at least a portion of the plurality of polishing across the substrate;

scanning across the substrate while ion polishing at a polishing angle, the ion polishing being performed for a longer time for a greater polishing of the plurality of polishing such that a greater amount of at least one of the mask layer and the hard bias layer is removed for the greater polishing of the plurality of polishing, the polishing angle corresponding to a first removal rate for the mask layer and a second removal rate for the hard bias layer, the first removal rate being is substantially equal to the second removal rate; and

removing a remaining portion of the hard mask after the step of performing the FIBS polishing.

11. The method of claim 10 wherein the step of scanning further includes:

making multiple passes across at least a portion of the substrate.

Assignments (7)
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0845 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL (FREMONT), LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2019
From: WESTERN DIGITAL (FREMONT), LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050450/0582 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 045501/0158 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038744/0755 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0845 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038744/0675 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 18, 2011
From: OSUGI, MASAHIRO; LUO, GUANGHONG; ZHOU, RONGHUI; YANG, DANNING; WAN, DUJIANG; JIANG, MING
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 026772/0321 →