IP Library Granted Patent US 8,713,770
Granted Patent B2
US 8,713,770 · App. 13/171,564 · Granted May 6, 2014

Capacitor comprising flex crack mitigation voids

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Quick Facts
Patent No.
US 8,713,770
App. No.
13/171,564
Granted
May 6, 2014
Kind
B2
Abstract

A ceramic multilayer surface-mount capacitor with inherent crack mitigation void patterning to channel flex cracks into a safe zone, thereby negating any electrical failures.

Claims (18)

1. A method of forming a capacitor comprising:

forming a channel layer wherein said channel layer comprises at least one pre-channel in a predetermined pattern;

forming a first conductor over said channel layer;

forming a dielectric on said first electrode;

forming a second conductor on said dielectric; and

removing said pre-channel thereby forming a crack mitigation void in said predetermined pattern wherein said removing said pre-channel is by heating.

2. The method of forming a capacitor of claim 1 wherein said first conductor and said second conductor are coplanar.

3. The method of forming a capacitor of claim 2 further comprising a conductor between adjacent sets of coplanar said first conductor and said second conductor.

4. The method of forming a capacitor of claim 1 further comprising forming a dielectric layer between said channel layer and said first conductor.

5. The method of forming a capacitor of claim 1 further comprising forming a first external termination in electrical contact with said first conductor and forming a second external termination in electrical contact with said second conductor.

6. The method of forming a capacitor of claim 1 wherein said crack mitigation void is elongated.

7. The method of forming a capacitor of claim 6 wherein said crack mitigation void is disposed parallel to said conductors.

8. The method of forming a capacitor of claim 6 comprising pillars in said crack mitigation void.

9. The method of forming a capacitor of claim 1 comprising a multiplicity of crack mitigation voids wherein the closest approach of adjacent crack mitigation voids is a smaller distance than a closest approach between a crack mitigation void and a closest conductor of said parallel conductors.

10. The method of forming a capacitor of claim 1 wherein said crack mitigation void extends over a portion of a width of said capacitor.

11. The method of forming a capacitor of claim 1 comprising a multiplicity of crack mitigation voids.

12. The method of forming a capacitor of claim 11 wherein said crack mitigation voids comprise struts there between.

13. The method of forming a capacitor of claim 12 wherein said struts have a thickness which is less than a distance between said crack mitigation void and a closest plate of said parallel plates.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2011
From: PRYMAK, JOHN D.
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 026519/0821 →