CADMIUM STANNATE SPUTTER
A structure includes a barrier layer which can include a silicon aluminum oxide, and a transparent conductive oxide layer which can include a layer of cadmium and tin.
1 - 15 . (canceled)
16 . A multilayered structure comprising:
a substrate;
a barrier layer comprising silicon aluminum oxide adjacent to the substrate;
a transparent conductive oxide layer comprising cadmium stannate adjacent to the barrier layer; and
a buffer layer comprising tin oxide adjacent to the transparent conductive oxide layer.
17 . The structure of claim 16 , wherein the transparent conductive oxide layer further comprises a material selected from the group consisting of nickel, zinc, indium, lead, and bismuth.
18 . The structure of claim 16 , wherein the transparent conductive oxide layer further comprises more than about 0.001 wt. % nickel.
19 . The structure of claim 16 , wherein the transparent conductive oxide layer further comprises less than about 1.0 wt. % nickel.
20 . The structure of claim 16 , wherein the transparent conductive oxide layer has a sheet resistance of more than about 100 Ohms/square.
21 . The structure of claim 16 , wherein the transparent conductive oxide layer has a sheet resistance of less than about 1500 Ohms/square.
22 . The structure of claim 16 , wherein the transparent conductive oxide layer comprises an annealed layer having a sheet resistance of more than about 5 Ohms/square.
23 . The structure of claim 16 , wherein the transparent conductive oxide layer comprises an annealed layer having a sheet resistance of less than about 15 Ohms/square.
24 . A photovoltaic device comprising:
a substrate;
a barrier layer comprising silicon aluminum oxide adjacent to the substrate;
a transparent conductive oxide layer comprising cadmium stannate adjacent to the barrier layer;
a buffer layer comprising tin oxide adjacent to the transparent conductive oxide layer;
a semiconductor window layer adjacent to the buffer layer;
a semiconductor absorber layer adjacent to the semiconductor window layer; and
a back contact adjacent to the semiconductor absorber layer.
25 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer further comprises a material selected from the group consisting of nickel, zinc, indium, lead, and bismuth.
26 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer further comprises more than about 0.001 wt. % nickel.
27 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer further comprises less than about 1.0 wt. % nickel.
28 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer has a sheet resistance of more than about 100 Ohms/square.
29 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer has a sheet resistance of less than about 1500 Ohms/square.
30 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer comprises an annealed layer having a sheet resistance of more than about 5 Ohms/square.
31 . The photovoltaic device of claim 24 , wherein the transparent conductive oxide layer comprises an annealed layer having a sheet resistance of less than about 15 Ohms/square.
32 . The photovoltaic device of claim 24 , further comprising a back support adjacent to the back contact.
33 . The photovoltaic device of claim 24 , wherein the semiconductor window layer comprises cadmium sulfide and the semiconductor absorber layer comprises cadmium telluride.
34 . A photovoltaic module comprising:
a plurality of photovoltaic cells adjacent to a substrate; and
a back cover adjacent to the plurality of photovoltaic cells, each one of the plurality of photovoltaic cells comprising:
a barrier layer comprising silicon aluminum oxide adjacent to the substrate;
a transparent conductive oxide layer comprising cadmium stannate adjacent to the barrier layer;
a buffer layer comprising tin oxide adjacent to the transparent conductive oxide layer;
a semiconductor window layer adjacent to the buffer layer;
a semiconductor absorber layer adjacent to the semiconductor window layer; and
a back contact adjacent to the semiconductor absorber layer.
35 . The photovoltaic module of claim 34 , further comprising:
a first strip of tape having a length distributed along the back contacts, the first strip of tape comprising a front surface and a back surface, each surface containing an adhesive;
a first lead foil distributed along the length of the first strip of tape;
a second strip of tape, having a length shorter than that of the first strip of tape, distributed along the length and between the ends of the first strip of tape, wherein the second strip of tape comprises a front and back surface, each containing an adhesive;
a second lead foil, having a length shorter than that of the second strip of tape, distributed along the length of the second strip of tape; and
a plurality of parallel bus bars, positioned adjacent and perpendicular to the first and second strips of tape, wherein each one of the plurality of parallel bus bars contacts one of the first or second lead foils.
36 . The photovoltaic module of claim 34 , further comprising first and second submodules, wherein the first submodule comprises two or more cells of the plurality of photovoltaic cells connected in series, and the second submodule comprises another two or more cells of the plurality of photovoltaic cells connected in series, wherein the first and second submodules are connected in parallel through a shared cell.
37 . A method for generating electricity, the method comprising:
illuminating a photovoltaic cell with a beam of light to generate a photocurrent; and
collecting the generated photocurrent, wherein the photovoltaic cell comprises:
a substrate;
a barrier layer comprising silicon aluminum oxide adjacent to the substrate;
a transparent conductive oxide layer comprising cadmium stannate adjacent to the barrier layer;
a buffer layer comprising tin oxide adjacent to the transparent conductive oxide layer;
a semiconductor window layer adjacent to the buffer layer;
a semiconductor absorber layer adjacent to the semiconductor window layer; and
a back contact adjacent to the semiconductor absorber layer.
38 . The method of claim 37 , wherein the beam of light comprises a wavelength of more than about 400 nm.
39 . The method of claim 37 , wherein the beam of light comprises a wavelength of less than about 700 nm.
40 . The method of claim 37 , wherein the beam of light comprises ultraviolet light.
41 . The method of claim 37 , wherein the beam of light comprises blue light.
42 . The method of claim 37 , wherein the beam of light comprises white light.
43 . The method of claim 37 , further comprising converting the photocurrent from DC to AC.