IP Library Granted Patent US 8,513,754
Granted Patent B2
US 8,513,754 · App. 13/172,696 · Granted Aug 20, 2013

Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell

Inventor: JaeSung You (Seoul, KR)
Assignee: LG Electronics Inc.
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Quick Facts
Patent No.
US 8,513,754
App. No.
13/172,696
Granted
Aug 20, 2013
Kind
B2
Abstract

A solar cell includes a substrate of a first conductive type; an emitter layer that is positioned on the substrate and is a second conductive type that is opposite to the first conductive type; first electrodes that are connected to the emitter layer; and a second electrode that is connected to the substrate, wherein the emitter layer includes a first emitter portion and a second emitter portion, the first electrodes include a finger electrode, and a bus electrode intersecting and connected to the finger electrode, and the first emitter portion and the second emitter portion are positioned under the bus electrode.

Claims (27)

1. A solar cell, comprising:

a substrate of a first conductive type;

an emitter layer that is positioned on the substrate and is a second conductive type that is opposite to the first conductive type;

first electrodes that are connected to the emitter layer; and

a second electrode that is connected to the substrate,

wherein the emitter layer comprises a first emitter portion and a second emitter portion,

the first electrodes comprise a finger electrode, and a bus electrode intersecting and connected to the finger electrode, the first emitter portion and the second emitter portion are positioned under the bus electrode,

the plurality of finger electrodes and the plurality of bus electrode are formed on a surface of the substrate and are coplanar, and

the plurality of first emitter portions extend from the surface of the substrate to a first doped depth, and the plurality of second emitter portions extend from the surface of the substrate to a second doped depth that is different from the first doped depth.

2. The solar cell of claim 1 , wherein the second emitter portion has an impurity concentration that is more than an impurity concentration of the first emitter portion.

3. The method of claim 1 , wherein the second emitter portion has an impurity doped depth that is more than an impurity doped depth of the first emitter portion.

4. The solar cell of claim 1 , wherein the second emitter portion has a thickness more than a thickness of the first emitter portion.

5. The solar cell of claim 1 , further comprising an anti-reflection layer positioned on the emitter layer.

6. A solar cell, comprising:

a substrate of a first conductive type;

an emitter layer that is positioned on the substrate and is a second conductive type that is opposite to the first conductive type;

first electrodes that are connected to the emitter layer; and

a second electrode that is connected to the substrate,

wherein the emitter layer comprises a plurality of first emitter portions and a plurality of second emitter portions,

the first electrodes comprise a plurality of finger electrodes, and a plurality of bus electrodes intersecting and connected to the plurality of finger electrodes,

the plurality of bus electrodes are formed over alternate ones of the plurality of first emitter portions and the plurality of second emitter portions,

the plurality of finger electrodes and the plurality of bus electrode are formed on a surface of the substrate and are coplanar, and

the plurality of first emitter portions extend from the surface of the substrate to a first doped depth, and the plurality of second emitter portions extend from the surface of the substrate to a second doped depth that is different from the first doped depth.

7. The solar cell of claim 6 , wherein the plurality of second emitter portions have an impurity concentration that is more than an impurity concentration of the plurality of first emitter portions.

8. The solar cell of claim 6 , wherein the plurality of second emitter portions have an impurity doped depth that is more than an impurity doped depth of the plurality of first emitter portions.

9. The solar cell of claim 6 , wherein the plurality of second emitter portions have a thickness more than a thickness of the plurality of first emitter portions.

10. The solar cell of claim 6 , further comprising an anti-reflection layer positioned on the emitter layer.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 6, 2024
From: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO. LTD
To: JINGAO SOLAR CO., LTD
Reel/Frame 067329/0132 →
CHANGE OF NAME Recorded Dec 19, 2023
From: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
To: SHANGRAO XINYUAN YUEDONG TECHNOLOGY DEVELOPMENT CO. LTD
Reel/Frame 066078/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2022
From: YOU, JAESUNG
To: LG ELECTRONICS INC.
Reel/Frame 061855/0352 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2022
From: LG ELECTRONICS INC.
To: SHANGRAO JINKO SOLAR TECHNOLOGY DEVELOPMENT CO., LTD
Reel/Frame 061572/0487 →
Priority Claims (1)
KR 10-2008-0035588 · Apr 17, 2008 · national
Continuity (2)
Division 12425691 · Apr 17, 2009
Related Publication 20110253209A1 · Oct 20, 2011