Semiconductor light emitting device

1. A semiconductor light emitting device comprising:

a light emission structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and

a wavelength conversion layer disposed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a plurality of voids therein,

wherein the plurality of voids are disposed in the interior of the wavelength conversion layer and are separately and regularly arranged to form certain patterns, and

wherein the patterns comprise a plurality of voids having a rectangular parallelepiped shape and separately disposed in one direction and a plurality of voids having a rectangular shape and separately disposed in another direction, the voids forming lattice patterns.

2. The device of claim 1 , wherein the voids disposed in one direction and the voids disposed in another direction are disposed on mutually different planes.

3. A semiconductor light emitting device comprising:

a substrate including a recess disposed on one surface thereof;

a light emission structure disposed on an other surface of the substrate on which the recess is not disposed, and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and

a wavelength conversion layer disposed in the recess of the substrate, made of a light-transmissive material including phosphor particles or quantum dots, and having voids disposed in an interior of the wavelength conversion layer so as to be completely enclosed by the wavelength conversion layer,

wherein the plurality of voids are disposed in the interior of the wavelength conversion layer and are separately and regularly arranged to form certain patterns, and

the patterns comprise a plurality of voids having a rectangular parallelepiped shape and separately disposed in one direction and a plurality of voids having a rectangular shape and separately disposed in another direction, the voids forming lattice patterns.

4. The device of claim 3 , wherein the voids disposed in the interior of the wavelength conversion layer have at least one shape among a spherical shape, a cylindrical shape, and a polyhedral shape.

5. The device of claim 3 , wherein the wavelength conversion layer further comprises at least some voids that are exposed to an outside of the wavelength conversion layer.

6. The device of claim 3 , wherein the wavelength conversion layer further comprises cavities filled with a material having a refractive index different from that of the wavelength conversion layer.

7. The device of claim 6 , wherein the cavities are filled with a material including at least one of SiO 2 , TiO 2 , and Al 2 O 3 .

8. The device of claim 3 , wherein a plurality of voids are disposed in the interior of the wavelength conversion layer and have irregular patterns.

9. The device of claim 3 , wherein the recess disposed on the substrate has patterns having a three-dimensional shape.

10. The device of claim 9 , wherein the patterns having the three-dimensional shape have a cylindrical shape or a polygonal pillar shape.

11. The device of claim 3 , wherein a plurality of recesses are separately disposed on the substrate.

12. The device of claim 3 , further comprising:

a concavo-convex structure disposed in the interior of the recess.

13. The device of claim 12 , wherein the concave-convex structure disposed in the interior of the recess has a cylindrical shape or a polygonal pillar shape.

14. The device of claim 3 , wherein the light emission structure comprises the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer which are sequentially stacked to be disposed on the substrate, and

the light emission structure further comprises:

a first conductive electrode disposed on the first conductive semiconductor layer exposed by etching portions of the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer; and

a second conductive electrode disposed on the second conductive semiconductor layer.

15. The device of claim 3 , wherein the substrate is a sapphire substrate.

16. The device of claim 3 , wherein the wavelength conversion layer disposed in the recess of the substrate is coplanar with the substrate.

17. The device of claim 3 , wherein the voids disposed in one direction and the voids disposed in another direction are disposed on mutually different planes.

18. The device of claim 3 , wherein the voids are disposed so as to be completely enclosed against the exterior to prevent empty spaces formed in the interior of the voids from being exposed to the outside of the wavelength conversion layer.