Non-volatile storage having a connected source and well

1. A method for fabricating non-volatile storage, comprising:

forming a first NAND string of non-volatile storage elements on a well;

forming a first bit line contact in said well for said first NAND string of non-volatile storage elements between a drain side select gate for the first NAND string and a source side select gate for a second neighbor NAND string;

forming a first source line contact in said well for said first NAND string of non-volatile storage elements between a source side select gate for the first NAND string and a drain side select gate for a third neighbor NAND string;

forming a first bit line that connects to said first bit line contact without protruding into said well; and

intentionally forming a source line that extends into said first source line contact and extends into said well.

2. A method according to claim 1 , wherein:

said forming said first bit line comprises forming a line that terminates at said first bit line contact.

3. A method according to claim 1 , wherein:

said forming said source line comprises forming a line that passes through said first source line contact and protrudes into said well.

4. A method according to claim 1 , wherein:

said forming said first bit line comprises forming a line that terminates at said first bit line contact.

5. A method according to claim 1 , wherein:

said forming said source line comprises forming a line that passes through said first source line contact and protrudes into said well.

6. A method according to claim 1 , wherein:

said first bit line and said source line are formed of metal.

7. A method according to claim 1 , further comprising:

forming the second neighbor NAND string of non-volatile storage elements on said well;

forming a second bit line contact in said well for said second neighbor NAND string of non-volatile storage elements between the drain side select gate for the second neighbor NAND string and a source side select gate for a fourth neighbor NAND string;

forming a second source line contact in said well for said second neighbor NAND string of non-volatile storage elements between a source side select gate for the second neighbor NAND string and a drain side select gate for a first neighbor NAND string; and

forming a second bit line that connects to said second bit line contact without protruding into said well, said source line extends into said second source line contact.

8. A method according to claim 1 , wherein said forming said first bit line and said forming said source line comprise:

depositing a first dielectric layer;

using photolithography to define a circle for said first bit line and a strip for said source line;

etching through said first dielectric layer based on said circle and said strip;

using photolithography to expose an area for said first source line;

etching through said first source line contact and into said well; and

filling in etched areas with metal.