Mode-locked optically pumped semiconductor laser
View Patent ↗A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency of about 100 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences.
1. Laser apparatus, comprising:
a laser-resonator having a resonator length;
at least one surface-emitting multilayer semiconductor gain-structure located in the laser-resonator, the at least one and any other gain-structure including a plurality of active-layers spaced apart by spacer-layers and having an excited-state lifetime characteristic of material of the active-layers;
means for energizing the gain-structure, thereby causing radiation having a fundamental wavelength characteristic of the active layers of the gain-structure to circulate in the laser-resonator;
mode-locking means located in the laser-resonator for causing the circulating radiation to circulate as sequence of mode-locked pulses at a predetermined pulse-repetition frequency determined by the resonator length wherein the pulses have a duration of about 200 femtoseconds or less; and
an optical arrangement for causing the circulating radiation to make at least 4 gain-structure incidences during each round trip thereof in the laser-resonator, with a predetermined time between gain-structure incidences less than twice excited-state lifetime of the gain-structure.
2. The apparatus of claim 1 , wherein the resonator length is selected such that the pulse repetition frequency is between about 50 megahertz and 150 megahertz and wherein the excited state lifetime of the at least one and any other gain-structure is less than about 10 nanoseconds.
3. The apparatus of claim 1 , wherein there is only one surface-emitting multilayer semiconductor gain-structure located in the laser-resonator.
4. The apparatus of claim 1 , wherein there is a plurality of surface-emitting multilayer semiconductor gain-structures located in the laser-resonator.
5. The apparatus of claim 1 , wherein the means for energizing the gain structure is a source of optical pump radiation.
6. The apparatus of claim 5 , wherein the pump-radiation is repeatedly pulsed radiation at the same pulse-repetition frequency as that of the mode-locked laser radiation circulating in the laser-resonator.
7. The apparatus of claim 1 , wherein the mode-locking means is a saturable absorption minor.
8. The apparatus of claim 7 , wherein the laser resonator is a standing-wave laser resonator and is terminated by first and second mirrors and the saturable absorbing minor is the first minor.
9. The apparatus of claim 8 , wherein the second minor is an output coupling minor of the laser resonator.
10. The apparatus of claim 1 , wherein the time between gain-structure incidences is equal to or less than about the excited-state lifetime of the gain-structure.
11. A mode-locked, external-cavity, optically pumped semiconductor laser, comprising:
a laser-resonator having a resonator length;
a surface-emitting multilayer semiconductor gain-structure located in the laser-resonator the gain-structure including a plurality of active-layers spaced apart by spacer-layers and having an excited-state lifetime characteristic of material of the active-layers;
a light source for optically pumping the gain-structure, thereby causing radiation having a fundamental wavelength characteristic of the active layers of the gain-structure to circulate in the laser-resonator;
mode-locking means located in the laser-resonator for causing the circulating radiation to circulate as sequence of mode-locked pulses at a predetermined pulse-repetition frequency the resonator length being selected such that the pulse-repetition frequency is between about 50 megahertz and about 150 megahertz and wherein the pulses have a duration of about 200 femtoseconds or less; and
one or more mirrors arranged to cause the circulating radiation to make at least 4 incidences on the gain-structure during each round trip thereof in the laser-resonator.
12. The laser of claim 11 , wherein the mode-locking means is a saturable absorption mirror.
13. The laser of claim 12 , wherein the laser resonator is a standing-wave laser resonator and is terminated by first and second minors, the saturable absorption minor being the first minor.
14. The laser of claim 13 , wherein the second mirror is an output coupling minor of the laser resonator.
15. The laser of claim 11 , wherein the optical arrangement for causing the circulating radiation to make at least 4 incidences on the gain-structure is configured such that the time between successive incidences is about the same.
16. The laser of claim 15 , wherein the time between the successive incidences is less than about 10 nanoseconds.