X-ray detector panel

1. An X-ray detector panel, comprising:

a substrate;

a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other;

a photodiode including a first electrode connected to the drain electrode of the transistor, a photoconductive layer disposed on the first electrode, and a second electrode disposed on the photoconductive layer;

an interlayer insulating layer including a first interlayer insulating layer covering the transistor and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy in a range of about 8 eV to about 10 eV;

a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer;

a bias line disposed on the interlayer insulating layer and contacting the second electrode of the photodiode via the interlayer insulating layer; and

a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer;

the interlayer insulating layer further comprising a second interlayer insulating layer disposed on the first interlayer insulating layer, the second interlayer insulating layer being formed of an insulating material having a band gap energy in a range of about 3 eV to about 10 eV.

2. The X-ray detector panel of claim 1 , wherein the interlayer insulating layer has a thickness in a range of about 6000 Å to about 10μm.

3. The X-ray detector panel of claim 1 , wherein the first interlayer insulating layer has a thickness in a range of about 300 Å to about 1000Å.

4. The X-ray detector panel of claim 1 , wherein the insulating material of the first interlayer insulating layer comprises a silicon oxide (SiOx) layer.

5. The X-ray detector panel of claim 1 , wherein the insulating material of the second interlayer insulating layer comprises a silicon oxynitride (SiONx) layer.

6. The X-ray detector panel of claim 1 , wherein the passivation layer comprises a silicon nitride (SiNx) layer.

7. The X-ray detector panel of claim 1 , further comprising a planarization layer disposed on the passivation layer.

8. The X-ray detector panel of claim 7 , further comprising a scintillator layer disposed on the planarization layer.

9. The X-ray detector panel of claim 1 , wherein the first electrode of the photodiode extends from the drain electrode of the transistor.

10. The X-ray detector panel of claim 1 , wherein the photodiode comprises a PIN diode.

11. The X-ray detector panel of claim 1 , further comprising an ohmic contact layer disposed between the active layer and each of the source electrode and the drain electrode.

12. An X-ray detector panel, comprising:

a substrate;

a transistor including a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, an active layer disposed on the gate insulating layer, and a source electrode and a drain electrode disposed on the active layer and separated from each other;

a photodiode including a first electrode which includes a lower layer and an upper layer disposed on the lower layer, a photoconductive layer disposed on the upper layer of the first electrode, and a second electrode disposed on the photoconductive layer;

a capping layer covering the transistor;

an interlayer insulating layer including a first interlayer insulating layer covering the capping layer and the photodiode, the first interlayer insulating layer being formed of an insulating material having a band gap energy in a range of about 8 eV to about 10 eV;

a data line disposed on the interlayer insulating layer and contacting the source electrode of the transistor via the interlayer insulating layer and the capping layer;

a bias line disposed on the interlayer insulating layer and contacting the second electrode of the photodiode via the interlayer insulating layer; and

a passivation layer disposed on the data line, the bias line, and the interlayer insulating layer;

the interlayer insulating layer further comprising a second interlayer insulating layer disposed on the first interlayer insulating layer, the second interlayer insulating layer being formed of an insulating material having a band gap energy in a range of about 3 eV to about 10 eV.

13. The X-ray detector panel of claim 12 , wherein the interlayer insulating layer has a thickness in a range of about 6000 Å to about 10μm.

14. The X-ray detector panel of claim 12 , wherein the first interlayer insulating layer has a thickness in a range of about 300 Å to about 1000Å.

15. The X-ray detector panel of claim 12 , wherein the insulating material of the first interlayer insulating layer comprises a silicon oxide (SiOx) layer.

16. The X-ray detector panel of claim 12 , wherein the insulating material of the second interlayer insulating layer comprises a silicon oxynitride (SiONx) layer.

17. The X-ray detector panel of claim 12 , wherein the passivation layer comprises a silicon nitride (SiNx) layer.

18. The X-ray detector panel of claim 12 , wherein the photodiode comprises a PIN diode.