LIGHT EMITTING DIODE
A light emitting diode (“LED”) includes a substrate, a light emitting unit on the substrate and generating light, an encapsulation layer overlapping an entire of exposed surfaces of the light emitting unit, and a coating layer including an organic material and on the encapsulation layer. A refractive index of the coating layer is greater than a refractive index of air and less than a refractive index of the encapsulation layer.
1 . A light emitting diode comprising:
a substrate;
a light emitting unit on the substrate and generating light;
an encapsulation layer covering the light emitting unit; and
a coating layer including an organic material and on the encapsulation layer,
wherein a refractive index of the coating layer is greater than a refractive index of air and less than a refractive index of the encapsulation layer.
2 . The light emitting diode of claim 1 , wherein
the coating layer includes at least one of oleic acid, palmitic acid, eicosenoic acid, and erucic acid.
3 . The light emitting diode of claim 2 , wherein
the encapsulation layer includes a phosphor therein.
4 . The light emitting diode of claim 3 , wherein
the phosphor is an oxide group compound or a nitride group compound.
5 . The light emitting diode of claim 4 , wherein
the phosphor includes a nitride crystal or oxynitride crystal comprising europium (Eu) among a crystal having a 13 type silicon nitride (Si 3 N 4 ) crystal structure.
6 . The light emitting diode of claim 4 , wherein
the phosphor includes at least one of (Ba,Sr,Ca) 2 SiO 4 :Eu 2 +, Ba 2 MgSi 2 O 7 :Eu 2 +, Ba 2 ZnSi 2 O 7 :Eu 2 +, BaAl 2 O 4 :Eu 2 +, SrAl 2 O 4 :EU 2 +, BaMgAl 10 O 17 :Eu 2 +, Mn 2 +, and BaMg 2 Al 16 O 27 :Eu 2 + of a green wavelength range.
7 . The light emitting diode of claim 4 , wherein
the phosphor includes at least one of BaMg 2 Al 16 O 27 :Eu 2 +, Sr 4 Al 14 O 25 :Eu 2 +,BaAl 18 O 13 :Eu 2 +, (Sr,Mg,Ca,Ba) 5 (PO 4 ) 3 Cl:Eu 2 +, and Sr 2 Si 3 O 8 .2SrCl 2 :Eu 2 + of a blue wavelength range.
8 . The light emitting diode of claim 4 , wherein
the phosphor includes at least one of Y 2 O 3 :Eu 3 +, Bi 3 +, (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2 +, Mn 2 +, (Ca,Sr,Ba,Mg,Zn) 10 (PO 4 ) 6 (F,Cl,Br,OH) 2 :Eu 2 +, Mn 2 +, (Gd,Y,Lu,La) 2 O 3 :Eu 3 +, Bi 3 +, (Gd,Y,Lu,La)BO 3 :Eu 3 +, Bi 3 +, (Gd,Y,Lu,La)(P,V)O 4 :Eu 3 +, Bi 3 +, (Ba,Sr,Ca)MgP 2 O 7 :Eu 2 +, Mn 2 +, (Y,Lu) 2 WO 6 :Eu 3 +, Mo 6 +, (Sr,Ca,Ba,Mg,Zn) 2 SiO 4 :Eu 2 +, and Mn 2 + as an oxide group, or (Sr,Ca)AlSiN 3 :Eu 2 +, (Ba,Sr,Ca) 2 Si 5 N 8 :Eu 2 +, or (Ba,Sr,Ca) 2 SiO 4-x N y :Eu 2 + as a nitride group of a red wavelength range.
9 . The light emitting diode of claim 1 , wherein
the encapsulation layer includes an epoxy resin or silicon resin.
10 . The light emitting diode of claim 9 , wherein
the light which is generated by the light emitting unit passes through the encapsulation layer and the coating layer in sequence.
11 . The light emitting diode of claim 1 , wherein
the coating layer includes a lower layer, and an upper layer disposed on the lower layer, and
the upper layer includes a material having a lower refractive index than a material of the lower layer.
12 . The light emitting diode of claim 1 ,
further comprising a mold frame on an upper surface of the substrate, and
the light emitting unit and the encapsulation layer are inside the mold frame.
13 . The light emitting diode of claim 12 , wherein
the coating layer is extended from the encapsulation layer and overlaps a portion of a lateral side of the mold frame.
14 . The light emitting diode of claim 1 , wherein
the encapsulation layer includes dual layers having different refractive indexes.
15 . The light emitting diode of claim 14 , wherein
the encapsulation layer includes a lower encapsulation layer covering the light emitting unit, and
an upper encapsulation layer on the lower encapsulation layer, and
a refractive index of the upper encapsulation layer is smaller than a refractive index of the lower encapsulation layer.