IP Library Granted Patent US 8,586,989
Granted Patent B2
US 8,586,989 · App. 13/177,104 · Granted Nov 19, 2013

Thin film transistor array panel and display device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,586,989
App. No.
13/177,104
Granted
Nov 19, 2013
Kind
B2
Abstract

A display device includes a first display panel including a common electrode disposed thereon, and a second display panel including; thin film transistors (“TFTs”) each including a gate electrode, a source electrode, and a drain electrode, a first passivation layer disposed on the source and drain electrodes, a second passivation layer disposed on the first passivation layer and including at least one sensing protrusion, pixel electrodes disposed on the second passivation layer and connected with the drain electrode, and at least one conductive member disposed on the sensing protrusion.

Claims (15)

1. A thin film transistor array panel comprising:

a plurality of thin film transistors disposed on a substrate, each thin film transistor including a gate electrode, a source electrode, and a drain electrode;

a passivation layer disposed on the plurality of thin film transistors, and including the passivation layer defining at least one sensing protrusion and a contact hole; and

at least one conductive member disposed on the sensing protrusion,

wherein an upper surface of the sensing protrusion is higher than a surface of the passivation layer.

2. The thin film transistor array panel of claim 1 , wherein the conductive member comprises substantially the same material as pixel electrodes connected to a respective drain electrode of the drain electrodes.

3. The thin film transistor array panel of claim 2 , wherein the conductive member comprises indium tin oxide or indium zinc oxide.

4. The thin film transistor array panel of claim 2 , wherein the conductive member comprises a transparent conductive organic film.

5. The thin film transistor array panel of claim 2 , wherein the conductive member is disposed on the same layer on which the pixel electrode is disposed.

6. The thin film transistor array panel of claim 2 , wherein the passivation layer comprises an organic insulator.

7. The thin film transistor array panel of claim 1 , further comprising color filters disposed on the first passivation layer.

8. The thin film transistor array panel of claim 1 , wherein the passivation layer, sensing protrusion and contact hole are made of a same material.

9. The thin film transistor array panel of claim 1 , wherein the upper surface of the sensing protrusion extends directly from the lower surface of the passivation layer.

10. The thin film transistor array panel of claim 1 , wherein at least one conductive member overlaps the at least one sensing protrusion, which overlaps the passivation layer.

11. The thin film transistor array panel of claim 2 , wherein the at least one conductive member disposed on the sensing protrusion extends higher than the pixel electrodes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029151/0055 →