Solid-state imaging device, method of fabricating solid-state imaging device, and camera

1. A solid-state imaging device that receives incident light through a backside thereof, the solid-state imaging device comprising:

a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed;

a wiring layer on a first surface of the semiconductor layer;

a pad portion on a second surface of the semiconductor layer;

an on-chip microlens layer carried on the second surface of the semiconductor layer;

an opening in the semiconductor layer exposing a conductive layer of the wiring layer;

an insulating film extending from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer; and

a light shield film on the insulating film,

wherein,

a portion of the on-chip microlens layer lines said internal side-wall of said opening in the vertical direction, and

a portion of the light shield film is removed so that a portion of the light shield film coating said internal side-wall of said opening is insulated from a remainder of said light shield film.

2. A solid-state imaging device according to claim 1 , further comprising a bonding wire connected to the conductive layer exposed at a bottom of the opening.

3. A solid-state imaging device according to claim 1 , wherein the insulating film includes an antireflective film.

4. A solid-state imaging device according to claim 1 , wherein the insulating film includes an antireflective film, a passivation film, and an on-chip microlens film.

5. A method of fabricating a solid-state imaging device comprising:

forming a wiring layer on a first surface of a semiconductor layer having a plurality of pixels including photoelectric converters and pixel transistors;

forming in the semiconductor layer an opening corresponding to a pad portion of a second surface of the semiconductor layer so as to reach a conductive layer of the wiring layer;

forming an insulating film extending from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer;

forming a light shield film on said insulating film with a portion thereof removed so that a portion of the light shield film coating said internal side-wall is insulated from a remaining portion of said light shield film; and

forming an on-chip microlens layer on said second surface of said semiconductor layer such that a portion of said on-chip microlens layer lines said internal side-wall of said opening in the vertical direction.

6. A method of fabricating a solid-state imaging device according to claim 5 , further comprising:

connecting a bonding wire to the conductive layer exposed at a bottom of the opening.

7. A method of fabricating a solid-state imaging device according to claim 5 , wherein in the step of forming the insulating film, using an antireflective film as the insulating film.

8. A camera comprising:

a solid-state imaging device;

an optical lens; and

a signal processor,

wherein,

the solid-state imaging device includes (a) a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed; (b) a wiring layer on a first surface of the semiconductor layer; (c) a pad portion on a second surface of the semiconductor layer; (d) an on-chip microlens layer on said second surface of the semiconductor layer; (e) an opening in the semiconductor layer that reaches a conductive layer of the wiring layer; (f) an insulating film extendedly formed from the second surface to an internal side-wall of the opening so as to coat the semiconductor layer; and (g) a light shield film formed on the insulating film,

wherein,

a portion of said on-chip microlens layer lines said internal side-wall of said opening in the vertical direction, and

a portion of the light shield film is removed so that a portion of the light shield film coating said internal side-wall of said opening is insulated from a remainder of said light shield film.