INPUT-OUTPUT ESD PROTECTION

1 . An integrated circuit device, comprising:

an input-out (I/O) pad;

an I/O circuit coupled to the I/O pad; and

an electro-static discharge (ESD) circuit coupled to the I/O pad, the ESD circuit including:

a diode clamp circuit; and

a first active clamp circuit, wherein the first active clamp circuit is configured to clamp the I/O pad without turning on the diode clamp circuit during a first ESD event.

2 . The device of claim 1 , wherein the first ESD event comprises applying a positive voltage to the I/O pad with respect to a ground pad of the integrated circuit device.

3 . The device of claim 1 , wherein the diode clamp comprises a first diode connected between the I/O pad and a supply voltage pad, and wherein the first active clamp circuit is configured to clamp the I/O pad at a predetermined voltage that is independent of a voltage drop across the first diode.

4 . The device of claim 1 , wherein the first active clamp circuit is configured to pass an ESD current caused by the first ESD event from the I/O pad to ground potential through a discharge path that is separate from the diode clamp circuit.

5 . The device of claim 4 , wherein the first active clamp circuit comprises a pass transistor to provide the separate path, wherein the pass transistor is connected in series between the I/O pad and ground potential and has a gate responsive to a voltage differential between a power supply pad and ground potential.

6 . The device of claim 5 , wherein the first active clamp circuit further comprises a driver circuit coupled to the I/O pad and configured to drive the pass transistor.

7 . The device of claim 1 , wherein the active clamp circuit comprises:

a pass transistor connected between the I/O pad and ground potential and having a gate; and

a driver circuit including a PMOS transistor and an NMOS transistor connected in series between the I/O pad and ground potential, wherein the PMOS transistor and the NMOS transistor have commonly-coupled drains that are connected to the gate of the pass transistor, and the NMOS transistor is self-biased.

8 . The device of claim 7 , wherein the active clamp circuit further comprises:

a resistor connected between a power supply pad and commonly-coupled gates of the PMOS and NMOS transistors; and

a capacitor connected between ground potential and the commonly-coupled gates of the PMOS and NMOS transistors.

9 . The device of claim 7 , wherein the driver circuit is active only during the first ESD event.

10 . The device of claim 1 , further comprising a second clamp circuit connected between the supply voltage pad and ground potential, and configured to protect the I/O circuit using the diode clamp circuit during a second ESD event.

11 . The device of claim 12 , wherein the second ESD event comprises applying a negative voltage to the I/O pad with respect to the supply voltage pad.

12 . An integrated circuit device, comprising:

an input-out (I/O) pad;

an I/O circuit coupled to the I/O pad; and

an electro-static discharge (ESD) circuit coupled to the I/O pad, the ESD circuit including:

a diode clamp circuit connected between a power supply pad and a ground pad; and

a first active clamp circuit coupled to the I/O pad and the I/O circuit, wherein the first active clamp circuit is configured to provide a discharge current path that is separate from the diode clamp circuit for a first ESD event, wherein the first ESD event comprises applying a positive voltage to the I/O pad with respect to a ground pad of the integrated circuit device.

13 . The device of claim 12 , wherein the diode clamp comprises a first diode connected between the I/O pad and the power supply pad, and wherein the first active clamp circuit is configured to clamp the I/O pad at a predetermined voltage that is independent of a voltage drop across the first diode.

14 . The device of claim 12 , wherein the first active clamp circuit is configured to pass an ESD current caused by the first ESD event from the I/O pad to ground potential through a discharge path that is separate from the diode clamp circuit.

15 . The device of claim 14 , wherein the first active clamp circuit comprises a pass transistor connected in series between the I/O pad and ground potential and has a gate responsive to a voltage differential between a supply voltage pad and ground potential.

16 . The device of claim 15 , wherein the first active clamp circuit further comprises a driver circuit coupled to the I/O pad and configured to drive the pass transistor.

17 . The device of claim 12 , wherein the active clamp circuit comprises:

a pass transistor connected between the I/O pad and ground potential and having a gate; and

a driver circuit including a PMOS transistor and an NMOS transistor connected in series between the I/O pad and ground potential, wherein the PMOS transistor and the NMOS transistor have commonly-coupled drains that are connected to the gate of the pass transistor, and wherein the NMOS transistor is self-biased.

18 . The device of claim 17 , wherein the active clamp circuit further comprises:

a resistor connected between a supply voltage pad and commonly-coupled gates of the PMOS and NMOS transistors; and

a capacitor connected between ground potential and the commonly-coupled gates of the PMOS and NMOS transistors.

19 . The device of claim 12 , further comprising a second clamp circuit connected between the supply voltage pad and ground potential, and configured to protect the I/O circuit using the diode clamp circuit during a second ESD event.

20 . The device of claim 19 , wherein the second ESD event comprises applying a negative voltage to the I/O pad with respect to the supply voltage pad.