Light-emitting device containing a composite electroplated substrate
View Patent ↗The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
1. A light-emitting diode, comprising:
a composite substrate having a first surface and a second surface;
a multiple-film layer on the first surface of the composite substrate, wherein the multiple-film layer is stacked alternately by multiple high strength films and multiple high toughness films;
a reflective layer on the multiple-film layer; and
a semiconductor epitaxy structure on the reflective layer, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
wherein the composite substrate comprises two different materials.
2. The light-emitting diode according to claim 1 , further comprising an interfacial layer between the composite substrate and the multiple-film layer.
3. The light-emitting diode according to claim 2 , further comprising a seed layer between the interfacial layer and the multiple-film layer.
4. The light-emitting diode according to claim 1 , further comprising a protection layer on the second surface of the composite substrate.
5. The light-emitting diode according to claim 1 , wherein the composite substrate is formed by the composite electroplating method.
6. The light-emitting diode according to claim 3 , wherein the seed layer comprises a stack of titanium/gold, titanium/copper, chromium/gold, or chromium/platinum/gold.
7. The light-emitting diode according to claim 1 , wherein the reflective layer comprises a stack of titanium/aluminum, titanium/gold, or titanium/silver.
8. The light-emitting diode according to claim 1 , wherein the first conductivity type semiconductor layer is n-type semiconductor containing at least one or more elements selected from the group consisting of gallium and nitrogen, and the second conductivity type semiconductor layer is p-type semiconductor containing at least one or more elements selected from the group consisting of gallium and nitrogen.
9. The light-emitting diode according to claim 1 , wherein the first conductivity type semiconductor layer is n-type semiconductor containing at least one or more elements selected from the group consisting of aluminum, gallium, indium, and phosphorous, and the second conductivity type semiconductor layer is p-type semiconductor containing at least one or more elements selected from the group consisting of aluminum, gallium, indium, and phosphorous.
10. The light-emitting diode according to claim 4 , wherein the material of the protection layer comprises gold or nickel.
11. The light-emitting diode according to claim 1 , wherein the material of the multiple-film layer comprises a stack of aluminum nitride/aluminum, aluminum nitride/copper, or titanium tungsten/aluminum.
12. The light-emitting diode according to claim 2 , wherein the material of the interfacial layer comprises copper, gold, nickel, or tin.
13. The light-emitting diode according to claim 1 , wherein the composite substrate comprises copper-diamond, copper-silicon carbide, nickel-silicon carbide, carbon nanotube-copper, carbon nanotube-nickel, or carbon nanofiber-copper.