Thin-film semiconductor device
A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.
1. A thin-film semiconductor device comprising:
a temperature sensor formed of a first thin-film semiconductor constructed and arranged to find a temperature by sensing a current;
a current-voltage converter formed of a second thin-film semiconductor and having a temperature dependence in which its current-voltage characteristic is different from that of said temperature sensor; and
an amplifier amplifying said voltage converted by said current-voltage converter;
wherein a temperature found by said temperature sensor is converted to a voltage by said current-voltage converter.
2. The thin-film semiconductor device of claim 1 ,
wherein the second thin-film semiconductor is a first thin-film transistor;
wherein the first thin-film semiconductor and the second thin-film semiconductor are formed on a single substrate.
3. The thin-film semiconductor device of claim 2 ,
wherein the first thin-film semiconductor includes a power source electrode constructed and arranged to receive a first voltage, the first voltage being a constant negative direct-current (DC) voltage;
wherein the second thin-film semiconductor includes an input electrode constructed and arranged to receive a second voltage and a control electrode constructed and arranged to receive a third voltage, the second voltage being a constant input voltage and the third voltage being a control voltage;
wherein both the first thin-film semiconductor and the second thin-film share a single output electrode;
wherein a change in current through the first thin-film semiconductor indicative of a change in temperature in the single substrate leads to a change in voltage indicative of the change in temperature in the single substrate at the single output electrode as determined by the third voltage of the control electrode.
4. The thin-film semiconductor device of claim 3 ,
wherein the first thin-film semiconductor is a second thin-film transistor having a gate electrode;
wherein the gate electrode of the second thin-film transistor is short circuited with the power source electrode;
wherein the gate electrode of the second thin-film transistor is connected to a drain electrode of the first thin-film transistor.
5. The thin-film semiconductor device of claim 3 ,
wherein the first thin-film semiconductor device is a pn junction diode;
wherein the pn junction diode is connected to a drain electrode of the first thin-film transistor.
6. The thin-film semiconductor device of claim 3 ,
wherein the first thin-film semiconductor is a second thin-film transistor having a gate electrode;
wherein the gate electrode of the second thin-film transistor is constructed and arranged to receive a fourth voltage;
wherein the gate electrode of the second thin-film transistor is connected to a drain electrode of the first thin-film transistor.