IR sensing transistor and manufacturing method of display device including the same
View Patent ↗An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.
1. An IR sensing transistor, comprising:
a light blocking layer formed on a substrate and configured to act as a gate of the IR sensing transistor;
a gate insulating layer formed on the light blocking layer;
a semiconductor formed on the gate insulating layer;
a pair of ohmic contact members formed on the semiconductor;
a source electrode and a drain electrode formed on respective ones of the ohmic contact members;
a passivation layer formed on the source electrode and the drain electrode; and
a gate electrode formed on the passivation layer,
wherein substantially all of the gate insulating layer lies on the light blocking layer.
2. The IR sensing transistor of claim 1 , wherein:
the source electrode and the drain electrode are positioned within an outer edge of the light blocking layer.
3. The IR sensing transistor of claim 2 , wherein:
the source electrode and the drain electrode both at least partially overlap the gate electrode, and at least two source electrodes are disposed in alternating manner with at least two drain electrodes.
4. The IR sensing transistor of claim 1 , wherein:
the gate electrode and the light blocking layer are connected through contact holes formed in the passivation layer and the gate insulating layer.
5. The IR sensing transistor of claim 4 , wherein:
the semiconductor comprises amorphous silicon, microcrystalline amorphous silicon germanium, or amorphous germanium.
6. The IR sensing transistor of claim 5 , wherein:
the light blocking layer comprises amorphous germanium or amorphous silicon germanium.
7. The IR sensing transistor of claim 1 , further comprising:
a conductive layer positioned on the light blocking layer; and
a lower gate electrode positioned on the conductive layer.
8. The IR sensing transistor of claim 7 , wherein:
the conductive layer includes at least one of titanium, molybdenum, a titanium compound, and a molybdenum compound.
9. The IR sensing transistor of claim 8 , wherein:
the conductive layer has a thickness in the range of about 50 to about 100 Å.
10. The IR sensing transistor of claim 1 , further comprising:
a lower gate electrode positioned on the light blocking layer,
wherein conductive impurities are doped into the light blocking layer.
11. The IR sensing transistor of claim 10 , wherein:
a thickness of the light blocking layer is about 300 Å or more.
12. The IR sensing transistor of claim 11 , wherein:
the conductive impurities comprise phosphorus.