Photopolymers and their use in organic thin film transistors
View Patent ↗Photopolymers are provided with composites and electronic devices including such photopolymers. Specifically, organic thin film transistors comprising a semiconductor layer, a polymeric layer in contact with the semiconductor layer, a gate electrode, a source electrode and a drain electrode are disclosed, wherein the semiconductor layer comprises an organic semiconductor compound, and the polymeric layer comprises a photocrosslinked product of a photopolymer.
1. An organic thin film transistor comprising a semiconductor layer, a polymeric layer in contact with the semiconductor layer, a gate electrode, a source electrode and a drain electrode, wherein the semiconductor layer comprises an organic semiconductor compound, and the polymeric layer consists of a photocrosslinked product of a homopolymer of the repeating unit:
wherein R 1 and R 2 independently are selected from H and F; and the phenyl group optionally is substituted with 1-5 substituents independently selected from the group consisting of a C 1-20 alkyl group, a C 1-20 haloalkyl group, a C 1-20 alkoxy group, and a —O—C 1-20 haloalkyl group; and
the organic thin film transistor exhibits a mobility of at least about 0.01 cm 2 /Vs and an I on /I off ratio of at least about 10 3 .
2. The organic thin film transistor of claim 1 , wherein R 1 is F and R 2 is H.
3. The organic thin film transistor of claim 1 , wherein R 1 is H and R 2 is F.
4. The organic thin film transistor of claim 1 , wherein each of R 1 and R 2 is H.
5. The organic thin film transistor of claim 1 , wherein each of R 1 and R 2 is F.
6. The organic thin film transistor of claim 1 , wherein the organic thin film transistor is an organic field-effect transistor (OFET).
7. The organic thin film transistor of claim 6 , wherein the organic thin film transistor is a bottom-contact bottom-gate OFET.
8. The organic thin film transistor of claim 6 , wherein the organic thin film transistor is a bottom-contact top-gate OFET.
9. The organic thin film transistor of claim 1 comprising a substrate, wherein the polymeric layer is deposited on the substrate, and the semiconductor layer is deposited on the polymeric layer.
10. The organic thin film transistor of claim 9 , wherein the substrate is selected from indium tin oxide (ITO), ITO-coated glass, and ITO-coated polyimide.