Back contact for a photovoltaic module
View Patent ↗The present invention relates to photovoltaic modules and methods of manufacturing photovoltaic modules.
1. A method for manufacturing a photovoltaic module, the method comprising:
forming a semiconductor window layer over a substrate;
forming a semiconductor absorber layer over the window layer, the semiconductor absorber layer comprising one of CdTe and CIGS;
removing oxides from the absorber layer surface;
forming a first metal layer in direct physical contact with the oxide removed surface of the absorber layer, the first metal layer comprising a material selected from the group consisting of molybdenum, tungsten, nickel, cobalt, titanium, molybdenum nitride, titanium nitride, tungsten nitride, mercury tellurium, or any combination thereof;
heat treating the formed first metal layer;
forming a capping passivating layer over the formed first metal layer prior to heat treating the formed metal layer; and
forming a second metal layer over the heat treated first metal layer,
wherein the capping passivating layer is removed from the first metal layer after heat treating the formed metal layer and before the forming of the second metal layer.
2. The method of claim 1 , wherein the first metal layer comprises a material selected from the group consisting of molybdenum, molybdenum nitride, or any combination thereof.
3. The method of claim 1 , wherein the step of heat treating the first metal layer comprises a temperature of about 100° C. to about 400° C. and a duration of about 30 seconds to about 30 minutes.
4. The method of claim 1 , wherein the step of heat treating the first metal layer comprises a temperature of about 200° C. to about 300° C. and a duration of about 1 minute to about 20 minutes.
5. The method of claim 1 , wherein the first metal layer has a thickness of about 5 angstroms to about 300 angstroms.
6. The method of claim 1 , wherein the first metal layer has a thickness of about 50 angstroms to about 250 angstroms.
7. The method of claim 1 , wherein the second metal layer comprises a material selected from the group consisting of aluminum, chromium, iron, vanadium, manganese, zinc, ruthenium, silver, gold, copper, platinum, tungsten, nickel, cobalt, titanium, molybdenum nitride, titanium disilicide, titanium silicide, titanium nitride, tungsten nitride, and mercury tellurium, or any combination thereof.
8. The method of claim 1 , wherein the step of forming a back contact layer further comprises heat treating the second metal layer at a temperature of about 50° C. to about 400° C. for a duration of about 1 minute to about 30 minutes.
9. The method of claim 1 , wherein the step of forming a back contact layer further comprises heat treating the second metal layer at a temperature of about 50° C. to about 150° C. for a duration of about 5 minutes to about 20 minutes.
10. The method of claim 1 , wherein the second metal layer has a thickness of about 500 angstroms to about 10000 angstroms.
11. The method of claim 1 , wherein the second metal layer has a thickness of about 1000 angstroms to about 5000 angstroms.
12. The method of claim 1 , further comprising:
cleaning a surface of the formed first metal layer before forming the second metal layer.
13. A method for manufacturing a photovoltaic module, the method comprising:
forming a semiconductor window layer over a substrate;
forming a semiconductor absorber layer over the window layer, the semiconductor absorber layer comprising one of CdTe and CIGS;
removing oxides from the absorber layer surface;
forming a first metal layer in direct physical contact with the oxide removed surface of the absorber layer;
heat treating the formed first metal layer;
forming a capping passivating layer over the formed first metal layer prior to the heat treating the formed metal layer; and
forming a second metal layer over the heat treated first metal layer,
wherein the capping passivating layer is removed from the first metal layer after heat treating the formed metal layer and before the forming of the second metal layer.