COLUMN STRUCTURE THIN FILM MATERIAL USING METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SOLAR CELL DEVICES

1 . A structure for a solar cell comprising:

a substrate;

a first electrode layer on the substrate;

a layer of p-conductivity type metal oxide material disposed on the first electrode layer, the metal oxide material having a plurality of single crystal structures, each of the single crystal structures having a column like shape with a dimension ranging from about 0.01 micron to about 10 microns in cross section, an optical absorption coefficient of greater than 10 4 cm −1 for light in a wavelength range about 400 nm to about 750 nm;

a resistive n-conductivity type buffer layer formed over the layer of metal oxide material; and

a second electrode layer disposed over the resistive buffer layer.

2 . The structure of claim 1 wherein the layer of p-conductivity type metal oxide comprises an oxide of copper.

3 . The structure of claim 1 wherein the layer of p-conductivity type metal oxide comprises an oxide of iron.

4 . The structure of claim 1 wherein the thickness of material comprises a metal sulfide.

5 . The structure of claim 1 wherein the layer of p-conductivity type metal oxide material has a first band gap ranging from about 0.8 eV to about 1.3 eV.

6 . The structure of claim 1 wherein the plurality of single crystal structures are irregular in cross section, but approximately circular.

7 . The structure of claim 1 wherein the plurality of single crystal structures are substantially parallel to each other.

8 . The structure of claim 1 wherein the substrate comprises one of a semiconductor, a metal alloy, or a transparent material.

9 . The structure of claim 8 wherein the first electrode layer comprises a transparent conductive material.

10 . The structure of claim 9 wherein the resistive n-conductivity type buffer layer comprises a layer of n-conductivity type metal oxide material.

11 . A solar cell device structure for a solar cell, the solar cell device structure comprises:

a substrate member having a surface region;

a first electrode structure overlying the surface region of the substrate member;

a layer of material having a P − type impurity characteristics overlying the first electrode structure, the layer of material comprising a plurality of single crystal structures, each of the single crystal structure being configured in a column like shape having a dimension of about 0.01 micron to about 10 micron and being characterized by a first end and a second end, wherein the layer of material is characterized by an optical absorption coefficient of greater than 10 4 cm −1 for light in a wavelength range comprising about 400 nm to about 750 nm;

a semiconductor material having a N + type impurity characteristics overlying the layer of material;

a resistive buffer layer overlying the semiconductor material; and

a second electrode structure overlying the buffer layer.

12 . The solar cell device structure of claim 11 wherein the substrate member comprises a semiconductor material or a compound semiconductor material.

13 . The solar cell device structure of claim 11 wherein the substrate member is transparent.

14 . The solar cell device structure of claim 11 wherein the substrate member comprises a metal including nickel, aluminum, or stainless steel.

15 . The solar cell device structure of claim 11 wherein the substrate member comprises an organic material including polycarbonate or acrylic material.

16 . The solar cell device structure of claim 11 wherein the first electrode structure comprises a transparent conductive material including indium tin oxide, fluorine doped tin oxide, or aluminum doped zinc oxide.

17 . The solar cell device structure of claim 11 wherein the first electrode comprises a metal material including gold, silver, platinum, nickel, aluminum, or a composite material such as metal alloys.

18 . The solar cell device structure of claim 11 wherein the first electrode comprises an organic material including a conductive polymer material.

19 . The solar cell device structure of claim 11 wherein the first electrode comprises a carbon based material.

20 . The solar cell device structure of claim 11 wherein the second electrode comprises a transparent conductive material selected from a group comprising indium tin oxide, fluorine doped tin oxide, or aluminum doped zinc oxide.

21 . The solar cell device structure of claim 11 wherein the second electrode comprises a metal material including gold, silver, platinum, nickel, aluminum, or a composite material.

22 . The solar cell device structure of claim 11 wherein the second electrode comprises an organic material.

23 . The solar cell device structure of claim 11 wherein the second electrode comprises graphite.

24 . The solar cell device structure of claim 11 wherein the layer of material has a first band gap ranging from about 0.8 eV to about 1.3 eV.

25 . The solar cell device structure of claim 11 wherein the layer of material comprises a metal oxide material.

26 . The solar cell device structure of claim 11 wherein the layer of material comprises a metal sulfide material.

27 . The solar cell device structure of claim 11 wherein the semiconductor material has a N + impurity characteristics.

28 . The solar cell device structure of claim 11 wherein the first end and the second end of the column are irregular in shape.

29 . The solar cell device structure of claim 11 wherein the each of the single crystal structure allows for a diode device region.

30 . The solar cell device structure of claim 11 wherein the column provides a grain boundary region for each of the plurality of the single crystal structures.

31 . The solar cell device structure of claim 11 wherein the solar cell device has a conversion efficiency ranging from about 10% to 20%.