STABILIZED BACK CONTACT FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE
Thin film photovoltaic devices including a thin film stabilization layer between the photovoltaic heterojunction and a back contact are provided. The thin film stabilization layer generally includes cadmium sulfide, but may also include copper and/or other materials. Methods are also provided for forming a thin film photovoltaic device via forming a thin film stabilization layer on a photovoltaic heterojunction (that generally overlies a transparent conductive oxide layer on a transparent substrate) and forming a back contact on the thin film stabilization layer.
1 . A thin film photovoltaic device, comprising:
a transparent substrate;
a transparent conductive oxide layer on the transparent substrate;
a photovoltaic heterojunction on the transparent conductive oxide layer;
a thin film stabilization layer on the photovoltaic heterojunction, wherein the thin film stabilization layer comprises cadmium sulfide; and,
a back contact on the thin film stabilization layer.
2 . The device of claim 1 , wherein the thin film stabilization layer further comprises copper.
3 . The device of claim 1 , wherein the thin film stabilization layer further comprises oxygen.
4 . The device of claim 1 , wherein the thin film stabilization layer has a thickness of about 0.1 nm to about 20 nm.
5 . The device of claim 1 , wherein the thin film stabilization layer has a thickness of about 1 nm to about 15 nm.
6 . The device of claim 1 , wherein the photovoltaic heterojunction comprises a cadmium sulfide layer and a cadmium telluride layer, wherein the cadmium sulfide layer is on the transparent conductive oxide layer and the cadmium telluride layer on the cadmium sulfide layer, and wherein the thin film stabilization layer is on the cadmium telluride layer.
7 . The device of claim 1 , further comprising a resistive transparent oxide layer between the transparent conductive oxide layer and the photovoltaic heterojunction.
8 . A thin film photovoltaic device, comprising:
a transparent substrate;
a transparent conductive oxide layer on the transparent substrate;
a photovoltaic heterojunction on the transparent conductive oxide layer, wherein the photovoltaic heterojunction includes a window layer and an absorber layer;
a thin film stabilization layer on the photovoltaic heterojunction, wherein the thin film stabilization layer has a greater affinity for copper than the absorber layer; and,
a back contact on the thin film stabilization layer.
9 . The device of claim 8 , wherein the absorber layer comprises cadmium telluride.
10 . The device of claim 9 , wherein the thin film stabilization layer comprises cadmium sulfide.
11 . A method of forming a thin film photovoltaic device, the method comprising:
forming a thin film stabilization layer on a photovoltaic heterojunction, wherein the thin film stabilization layer comprises cadmium sulfide, and wherein the photovoltaic heterojunction overlies a transparent conductive oxide layer on a transparent substrate; and,
forming a back contact on the thin film stabilization layer.
12 . The method of claim 11 , further comprising:
forming the photovoltaic heterojunction on the transparent conductive oxide layer, wherein the photovoltaic heterojunction includes a window layer and an absorber layer, the absorber layer comprising cadmium telluride.
13 . The method of claim 11 , further comprising:
treating the photovoltaic heterojunction with cadmium chloride.
14 . The method of claim 13 , wherein the photovoltaic heterojunction is treated with cadmium chloride after forming the forming a thin film stabilization layer on a photovoltaic heterojunction.
15 . The method of claim 13 , wherein the photovoltaic heterojunction is treated with cadmium chloride prior to forming the back contact on the thin film stabilization layer.
16 . The method of claim 13 , wherein treating the photovoltaic heterojunction with cadmium chloride comprises:
applying cadmium chloride to the photovoltaic heterojunction; and,
heating the photovoltaic heterojunction to a treatment temperature of about 380° C. to about 430° C.
17 . The method of claim 11 , further comprising:
doping the photovoltaic heterojunction with copper.
18 . The method of claim 17 , wherein the photovoltaic heterojunction is doped with copper after forming the thin film stabilization layer on the photovoltaic heterojunction.
19 . The method of claim 17 , further comprising:
treating the photovoltaic heterojunction with cadmium chloride.
20 . The method of claim 19 , wherein the thin film stabilization layer is formed on the photovoltaic heterojunction prior to doping the photovoltaic heterojunction with copper and prior to treating the photovoltaic heterojunction with cadmium chloride.