DEPOSITION SYSTEM

1 . A deposition system comprising:

a deposition chamber comprising a substrate position at which a substrate can be positioned;

a reservoir capable of containing a deposition material and being heated to vaporize the deposition material into a deposition vapor; and

a cracker section connected to the reservoir, wherein the cracker section is configured to crack clusters in the deposition vapor while the deposition vapor flows toward the substrate position.

2 . The deposition system of claim 1 , wherein the cracker section comprises a distribution manifold.

3 . The deposition system of claim 2 , wherein the distribution manifold is configured to direct the deposition vapor towards the substrate position.

4 . The deposition system of any one of claims 2 - 3 , wherein the distribution manifold comprises a first chamber configured to receive the deposition vapor from the reservoir.

5 . The deposition system of claim 4 , wherein the first chamber comprises a tube.

6 . The deposition system of any one of claims 4 - 5 , wherein the first chamber comprises at least one sidewall opening oriented in a first direction.

7 . The deposition system of any one of claims 4 - 6 , wherein the distribution manifold comprises a second chamber connected to the first chamber.

8 . The deposition system of claim 7 , wherein the second chamber comprises a tube.

9 . The deposition system of any one of claims 7 - 8 , wherein the second chamber surrounds the first chamber.

10 . The deposition system of claim 9 , wherein the second chamber comprises at least one sidewall opening oriented in a different direction from the at least one sidewall opening in the first chamber such that deposition vapor flowing from the at least one sidewall opening of the first chamber into the second chamber flows around the first chamber before flowing through the at least one sidewall opening in the second chamber.

11 . The deposition system of any one of the preceding claims, wherein the cracker section comprises a baffle section.

12 . The deposition system of claim 11 , wherein the baffle section is configured to increase the number of collisions between the deposition vapor and the baffle section surface, compared to the number of collisions between a deposition vapor and an unbaffled component.

13 . The deposition system of claim 11 , wherein the baffle section is heated.

14 . The deposition system of claim 1 , wherein the cracker section comprises a baffle section connected to a distribution manifold.

15 . The deposition system of claim 14 , wherein the baffle section is between the reservoir and the distribution manifold.

16 . The deposition system of claim 14 , further comprising a pipe connecting the baffle section and the distribution manifold.

17 . The deposition system of any one of the preceding claims, wherein the cracker section is positioned in the deposition chamber.

18 . The deposition system of any one of claims 1 - 17 , wherein the cracker section is positioned adjacent to the chamber.

19 . The deposition system of any of the preceding claims, wherein the cracker section is heated to a temperature higher than that of the reservoir.

20 . The deposition system of any of the preceding claims, wherein at least a portion of the cracker section comprises a material capable of obtaining desired deposition material composition and device efficiency.

21 . The deposition system of claim 20 , wherein at least a portion of the cracker section comprises a material selected from the group consisting of tantalum, stainless steel, and graphite.

22 . The deposition system of any one of the preceding claims, wherein the cracker section comprises a catalytic material to crack deposition material clusters.

23 . The deposition system of claim 22 , wherein the cracker section comprises a material selected from the group consisting of platinum, rhodium, rhenium, tantalum, molybdenum, tungsten, graphite, pyrolytic boron nitride, and combinations thereof.

24 . The deposition system of any one of the preceding claims, wherein at least a portion of the cracker section is heated to a temperature between about 25 degrees C. and about 1200 degrees C.

25 . The deposition system of claim 1 , wherein at least a portion of the cracker section is heated to a temperature above about 100 degrees C.

26 . The deposition system of claim 25 , wherein at least a portion of the cracker section is heated to a temperature above about 200 degrees C.

27 . The deposition system of claim 26 , wherein at least a portion of the cracker section is heated to a temperature above about 400 degrees C.

28 . The deposition system of claim 27 , wherein at least a portion of the cracker section is heated to a temperature above about 600 degrees C.

29 . The deposition system of any one of the preceding claims, further comprising a valve between the reservoir and the cracker section to control the flux rate of the deposition vapor from the heated reservoir.

30 . The deposition system of claim 29 , wherein the valve is heated to a temperature higher than that of the reservoir.

31 . The deposition system of any one of claims 29 - 30 , wherein the valve comprises a material resistant to corrosion selected from the group consisting of platinum, molybdenum, tantalum, chromium, niobium, stainless steel, and graphite, and combinations thereof.

32 . The deposition system of any one of the preceding claims, wherein the flux rate of deposition vapor is controlled by the temperature of the heated reservoir.

33 . The system of any one of the preceding claims, wherein the reservoir is positioned adjacent to the chamber.

34 . The deposition system of any one of the preceding claims, wherein the reservoir is positioned in the chamber.

35 . The deposition system of any one of the preceding claims, wherein the reservoir comprises a material resistant to selenium corrosion selected from the group consisting of platinum, molybdenum, tantalum, chromium, niobium, stainless steel, and graphite, and combinations thereof.

36 . The deposition system of any one of claims 2 - 27 , wherein the manifold is positioned parallel to the width of a substrate at the substrate position.

37 . The deposition system of any one of claims 6 - 10 , wherein the at least one sidewall opening in the first chamber or second chamber comprises a plurality of outlet holes for deposition vapor.

38 . The deposition system of claim 37 , wherein the outlet holes are designed for uniform distribution of deposition vapor flow along the manifold length.

39 . The deposition system of any one of claims 37 - 38 , wherein the sizes of the outlet holes increase along the manifold length.

40 . The deposition system of any one of claims 37 - 39 , wherein the density of outlet holes increases along the manifold length.

41 . The deposition system of any one of the preceding claims, further comprising a conveyor capable of positioning a substrate at the substrate position.

42 . A method of depositing a deposition material on a substrate by cracking clusters of deposition material in deposition vapor comprising:

heating the deposition vapor to provide dissociation energy needed to break bonds in the deposition vapor to smaller species; and

flowing the deposition vapor through a cracker section comprising a catalytic material to crack deposition material clusters in the deposition vapor.

43 . The method of claim 26 , wherein the deposition material comprises a semiconductor material.

44 . The method of claim 26 , wherein the deposition material comprises a Group V element.

45 . The method of claim 26 , wherein the deposition material comprises a Group VI element.

46 . The method of claim 26 , wherein the deposition material comprises selenium.

47 . The method of claim 26 , wherein the deposition material comprises phosphorus.

48 . The method of claim 26 , wherein the deposition material comprises arsenic.

49 . The method of claim 26 , wherein the deposition material comprises sulfur.

50 . The method of claim 26 , wherein the deposition material comprises tellurium.

51 . The method of claim 26 , wherein the deposition material comprises antimony.

52 . The method of any of the preceding claims, wherein at least a portion of the cracker section is configured to increase the number of collisions between the deposition vapor and the cracker section.

53 . A method of manufacturing a photovoltaic module comprising:

evaporating selenium;

heating the selenium vapor to provide dissociation energy needed to break Se—Se bonds in the selenium vapor to smaller species;

flowing the selenium vapor through a cracker section comprising a catalytic material to crack selenium clusters; and

depositing selenium on a substrate surface.

54 . The method of claim 53 , further comprising transporting the substrate proximate to the selenium vapor.