In-line metrology system
View Patent ↗A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
1. A metrology system for gauging characteristics of a photovoltaic semiconductor material formed on a substrate during a semiconductor film deposition and anneal process comprising:
an optical source for generating an optical radiation to illuminate a portion of the semiconductor material;
a sensor for measuring the absorption or reflection of the optical radiation in the semiconductor material; and
a processing module for analyzing the sensor measurement to obtain the information of the band gap, absorption band-edge, thickness and surface roughness of the semiconductor material.
2. The metrology system of claim 1 , wherein the substrate is transported on a conveyor.
3. The metrology system of any one of the preceding claims, wherein the metrology system is configured to measure the semiconductor material when the substrate is in motion.
4. The metrology system of claim 1 or claim 2 , further comprising a feed-back control loop, wherein the system adjusts the semiconductor film deposition and anneal process when it drifts from its purported baseline.
5. The metrology system of claim 1 or claim 2 , wherein the processing module provides an estimation of device performance based on the sensor measurement.
6. The metrology system of claim 1 or claim 2 , further comprising a spectrophotometer.
7. The metrology system of claim 1 or claim 2 , further comprising an ellipsometer.
8. The metrology system of claim 1 or claim 2 , further comprising a quantum efficiency measurement setup, wherein the optical signal incident on the semiconductor material is converted to electrical signals to gauge the quantum efficiency of the semiconductor material.
9. The metrology system of claim 1 or claim 2 , wherein the semiconductor material comprises cadmium telluride.
10. The metrology system of claim 1 or claim 2 , wherein the semiconductor material comprises cadmium sulfide.
11. The metrology system of claim 1 or claim 2 , further comprising an optical source that generates the probe beam that is incident on the sample being measured.
12. The metrology system of claim 1 or claim 2 , further comprising an optical assembly to collect diffusion or specular reflection from the substrate.
13. The metrology system of claim 1 or claim 2 , further comprising an optical assembly to collect the light transmitted through the semiconductor.
14. The metrology system of claim 1 or claim 2 , wherein the sensor comprises a spectrometer to parse the light into component wavelengths.
15. The metrology system of claim 1 or claim 2 , wherein the sensor comprises a photodiode or photo-multiplier to convert the optical signal to electrical signals for processing.
16. The metrology system of claim 1 or claim 2 , wherein the semiconductor material comprises a bilayer of semiconductor material.
17. A method of gauging characteristics of a photovoltaic semiconductor material formed on a substrate during a semiconductor film deposition and anneal process comprising:
generating an optical radiation to illuminate a portion of the semiconductor material;
measuring the absorption or reflection of the optical radiation from the semiconductor material; and
analyzing the measurement data to obtain the information on the optical band gap, absorption edge, surface roughness and thickness of the semiconductor material.
18. The method of claim 17 , further comprising transporting the substrate on a conveyor.
19. The method of any one of claims 17 - 18 , further comprising measuring the quantum efficiency of the semiconductor material.
20. The method of any one of claims 17 - 18 , further comprising measuring the refractive index of the semiconductor material.
21. The method of any one of claims 17 - 18 , further comprising correlating the optical properties of the semiconductor material to quantify the physical changes in the material, such as inter-diffusion.
22. The method of any one of claims 17 - 18 , further comprising estimating the device performance based on the sensor measurement and the concomitant prediction of changes of the material properties.
23. The method of any one of claims 17 - 18 , further comprising adjusting the semiconductor film deposition and anneal process when it drifts from its purported baseline with a feed-back control loop.
24. The metrology system of claim 10 , wherein the semiconductor material comprises a mixed layer containing Cadmium Telluride and Cadmium Sulfide.