SYSTEMS HAVING INTEGRATED MECHANICAL RESONATING STRUCTURES AND RELATED METHODS
Devices including integrated components are described. The components may be integrated by being formed on a single substrate. The components may be integrated by being formed on separate chips within a multi-chip module. The components being integrated may include mechanical resonating structures, which in some instances may be piezoelectric mechanical resonating structures.
1 . A system, comprising:
a global positioning system (GPS) receiver having a first mechanical resonating structure; and
an inertial navigation system (INS) comprising a second mechanical resonating structure,
wherein the first mechanical resonating structure and second mechanical resonating structure are integrated.
2 . The system of claim 1 , wherein the first mechanical resonating structure and the second mechanical resonating structure are integrated on a single semiconductor substrate.
3 . The system of claim 2 , wherein the first mechanical resonating structure has a first thickness and wherein the second mechanical resonating structure has a second thickness.
4 . The system of claim 2 , wherein the first mechanical resonating structure and the second mechanical resonating structure are formed, at least in part, by forming a first membrane in the semiconductor substrate and a second membrane in the semiconductor substrate for the first mechanical resonating structure and the second mechanical resonating structure, respectively.
5 . The system of claim 1 , wherein the first mechanical resonating structure is formed on a first semiconductor chip and the second mechanical resonating structure is formed on a second semiconductor chip, and wherein the first semiconductor chip and the second semiconductor chip are integrated into a single multi-chip module.
6 . The system of claim 1 , wherein the second mechanical resonating structure forms at least part of an accelerometer.
7 . The system of claim 1 , wherein the second mechanical resonating structure forms at least part of a gyroscope.
8 . The system of claim 1 , wherein one or more of the first mechanical resonating structure and the second mechanical resonating structure is a piezoelectric mechanical resonating structure.
9 . The system of claim 8 , wherein the first mechanical resonating structure is a piezoelectric mechanical resonating structure, and wherein the first mechanical resonating structure comprises a material selected from the group consisting of: AN, Zno, PZT, LNBO, and LTiO.
10 . The system of claim 1 , wherein the inertial navigation system comprises a third mechanical resonating structure, and wherein the first, second, and third mechanical resonating structures are integrated.
11 . The system of claim 1 , wherein the GPS receiver and INS form at least part of a transceiver.
12 . The system of claim 11 , wherein the transceiver comprises a microelectromechanical (MEMS) switch, and wherein the MEMS switch is integrated with at least the first mechanical resonating structure.
13 . The system of claim 12 , wherein one or more of the first mechanical resonating structure and the second mechanical resonating structure is a piezoelectric mechanical resonating structure.
14 . The system of claim 1 , wherein the first and second mechanical resonating structures are MEMS resonators.
15 . The system of claim 1 , further comprising a processor coupled to the GPS receiver and INS to receive output signals of the GPS receiver and INS and calculate a current location of the system.
16 . The system of claim 1 , wherein the first mechanical resonating structure is a microelectromechanical (MEMS) resonator configured to provide a reference clock signal for the GPS, wherein the second mechanical resonating structure is a MEMS resonator forming at least part of a multi-axis accelerometer, and
wherein the INS further comprises a third mechanical resonating structure which is a MEMS resonator forming at least part of a multi-axis gyroscope,
wherein the first, second, and third mechanical resonating structures are formed on a single semiconductor chip, and wherein a thickness of the third mechanical resonating structure is greater than a thickness of the second mechanical resonating structure.
17 . The system of claim 1 , wherein the first mechanical resonating structure is actuated and/or detected using electrostatic and/or piezoelectric and/or magnetic actuation and/or detection.
18 . The system of claim 1 , wherein the first mechanical resonating structure comprises a silicon layer and a second layer, and wherein the silicon layer and second layer operate in combination to compensate temperature-induced changes in a resonance frequency of the first mechanical resonating structure.