IP Library Granted Patent US 8,810,043
Granted Patent B2
US 8,810,043 · App. 13/195,325 · Granted Aug 19, 2014

Semiconductor device

Inventors: Takao Nishimura (Kawasaki, JP); Yoshikazu Kumagaya (Kawasaki, JP); Akira Takashima (Kawasaki, JP); Kouichi Nakamura (Kawasaki, JP); Kazuyuki Aiba (Kawasaki, JP)
Assignee: Fujitsu Semiconductor Limited
H01L23/3128H01L2224/16225H01L2224/73203H01L2224/32145H01L2924/01029H01L2924/14H01L2224/73265H01L2224/48465H01L24/81H01L2924/01046H01L24/13H01L2224/81203H01L2924/01006H01L2924/01074H01L2224/32225H01L2224/13027H01L21/563H01L2224/13155H01L2924/01049H01L2924/01005H01L2924/01013H01L2224/48091H01L2224/1134H01L2225/06558H01L2924/01023H01L2924/01047H01L2924/01079H01L2224/81193H01L2924/30107H01L24/48H01L2224/13099H01L2924/014H01L2924/09701H01L2224/16145H01L2924/01082H01L23/49833H01L25/0657H01L2224/1411H01L2224/45144H01L2924/10329H01L24/17H01L2924/01078H01L2924/15311H01L23/49811H01L2224/17107H01L2224/48227H01L2224/13144H01L2224/81801H01L2224/73207H01L2224/73204H01L2924/0105H01L2224/13147H01L2924/19042H01L2224/81194H01L2224/16227H01L2924/01022H01L2924/01033
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Quick Facts
Patent No.
US 8,810,043
App. No.
13/195,325
Granted
Aug 19, 2014
Kind
B2
Abstract

A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

Claims (27)

1. A semiconductor device, comprising:

a semiconductor element;

a supporting board facing the semiconductor element on a side of a main surface of the semiconductor element;

an outside connection terminal pad provided on the main surface of the semiconductor element;

at least one first convex-shaped outside connection terminal provided on the outside connection terminal pad; a conductive layer provided on the supporting board;

at least one second convex-shaped outside connection terminal provided on a first area of the conductive layer, the first convex-shaped outside connection terminal being located at a position shifted from a position of the second convex-shaped outside connection terminal in a plan view;

a solder resist layer formed on the supporting board and a second area of the conductive layer, the second area being different from the first area; and

a connection member provided between the outside connection terminal pad and the first area of the conductive layer and directly connected to the outside connection terminal pad and the first area of the conductive layer.

2. The semiconductor device as claimed in claim 1 , wherein the position of the first convex-shaped outside connection terminal on the outside connection terminal pad and the position of the second convex-shaped outside connection terminal on the conductive layer are offset in a width direction of the semiconductor device; and

position of a head end surface of the first convex-shaped outside connection terminal and position of a head end surface of the second convex-shaped outside connection terminal are overlapped in a thickness direction of the semiconductor device.

3. The semiconductor device as claimed in claim 2 ,

wherein the first convex-shaped outside connection terminal or the second convex-shaped outside connection terminal is plural, and

the second convex-shaped outside connection terminal is provided between neighboring ones of the first convex-shaped outside connection terminals or the first convex-shaped outside connection terminal is provided between neighboring second convex-shaped outside connection terminals.

4. The semiconductor device as claimed in claim 1 ,

wherein the first convex-shaped outside connection terminal includes a first base part on the convex-shaped outside connection terminal pad and a first head end part on the first base part, and

the second convex-shaped outside connection terminal includes a second base part on the conductive layer and a second head end part on the second base part.

5. The semiconductor device as claimed in claim 1 ,

wherein parts of the first convex-shaped outside connection terminal and the second convex-shaped outside connection terminals are the same height from the main surface of semiconductor element.

6. The semiconductor device as claimed in claim 1 ,

wherein a plurality of the second convex-shaped outside connection terminal are provided on the conductive layer.

7. The semiconductor device as claimed in claim 6 ,

wherein the first convex-shaped outside connection terminal is located between the plurality of the second convex-shaped outside connection terminal.

8. The semiconductor device as claimed in claim 1 ,

wherein a width of the first area is larger than a width of the second area.

9. The semiconductor device as claimed in claim 1 , wherein the first area includes a first part, a second part and a third part; the second part is located between the first part and the third part;

a total width of the first part and the third part is larger than a width of the second area; and

the total width of the first part and the third part is larger than a width of the second part.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0469 →
Priority Claims (2)
JP 2005-188887 · Jun 28, 2005 · national
JP 2006-061759 · Mar 7, 2006 · national
Continuity (2)
Division 11474406 · Jun 26, 2006
Related Publication 20110278723A1 · Nov 17, 2011