IP Library Granted Patent US 8,926,749
Granted Patent B2
US 8,926,749 · App. 13/196,934 · Granted Jan 6, 2015

Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods

Inventors: Arvid Neil Arvidson (Sanford, MI); Terence Lee Horstman (Frankenmuth, MI); Michael John Molnar (Freeland, MI); Chris Tim Schmidt (Auburn, MI); Roger Dale Spencer, Jr. (Midland, MI)
Assignee: Hemlock Semi Conductor
C30B29/06C30B15/02
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Quick Facts
Patent No.
US 8,926,749
App. No.
13/196,934
Granted
Jan 6, 2015
Kind
B2
Abstract

A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Claims (5)

1. Flowable chips comprising: polycrystalline silicon pieces prepared by a chemical vapor deposition process and having a controlled particle size distribution, where at least 75% of the particles have a particle size of 0.2 to 45 mm, generally nonspherical morphology, a level of bulk impurities not exceeding 0.03 ppma, and a level of surface impurities not exceeding 15 ppba.

2. The flowable chips of claim 1 , where the bulk impurities are boron in an amount less than or equal to 0.06 ppba, donor in an amount less than or equal to 0.30 ppba, phosphorous in an amount less than or equal to 0.02 ppba, carbon in an amount less than or equal to 0.024 ppma, and total bulk metal impurities in an amount less than or equal to 4.5 ppba.

3. The flowable chips of claim 2 , where the total bulk metal impurities are present in an amount less than or equal to 1 ppba.

4. The flowable chips of claim 3 , where the total bulk metal impurities comprise Cr in an amount less than or equal to 0.01 ppba, Cu in an amount less than or equal to 0.01 ppba, Fe in an amount less than or equal to 0.01 ppba, and Ni in an amount less than or equal to 0.01 ppba.

5. The flowable chips of claim 1 , where the surface impurities are Cr in an amount less than or equal to 0.06 ppba, Cu in an amount less than or equal to 0.15 ppba, Fe in an amount less than or equal to 10 ppba, Na in an amount less than or equal to 0.9 ppba, Ni in an amount less than or equal to 0.1 ppba, and Zn in an amount less than or equal to 0.6 ppba.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2022
From: ARVIDSON, ARVID NEIL; HORSTMAN, TERENCE LEE; MOLNAR, MICHAEL JOHN; SCHMIDT, CHRIS TIM; SPENCER, ROGER DALE, JR.
To: HEMLOCK SEMICONDUCTOR CORPORATION
Reel/Frame 061522/0980 →
CHANGE OF NAME Recorded Oct 25, 2022
From: HEMLOCK SEMICONDUCTOR CORPORATION
To: HEMLOCK SEMICONDUCTOR OPERATIONS LLC
Reel/Frame 061766/0605 →
Continuity (3)
Continuation 10298129 · Nov 14, 2002
Provisional Application 60358851 · Feb 20, 2002
Related Publication 20110286906A1 · Nov 24, 2011