Circuit arrangement and method for simulating a sensor

1. A circuit arrangement for simulating a sensor including first and second external connections configured to change at least one of a current intensity and a resistance between the two external connections as a function of a measured variable, said circuit arrangement comprising:

a current path connecting the external connections and having first and second field-effect transistors and a resistor connected therein; and

a circuit configured to actuate gates of the field-effect transistors so as to at least one of control and regulate a current through the current path,

wherein the resistor is configured as a shunt resistor connected to a bridge rectifier and the circuit configured to actuate the gates of the field-effect transistors comprises a control circuit configured to detect and regulate the current in the current path via a voltage drop at the shunt resistor.

2. The circuit arrangement according to claim 1 , wherein the control circuit further comprises an operational amplifier having an output connected to the gates of the field-effect transistors via a branched current path.

3. The circuit arrangement according to claim 1 , wherein the control circuit includes an input configured to accept a predetermined setpoint signal as a reference variable for the regulation.

4. The circuit arrangement according to claim 2 , wherein the control circuit includes an input configured to accept a predetermined setpoint signal as a reference variable for the regulation.

5. The circuit arrangement according to claim 3 further comprising a digital-analog transducer connected to the input of the control circuit.

6. The circuit arrangement according to claim 1 , wherein the field-effect transistors are configured as MOSFETs.

7. The circuit arrangement according to claim 1 , wherein the bridge rectifier includes Schottky diodes.

8. The circuit arrangement according to claim 1 further comprising a failure insertion unit connected in the current path between at least one of the external connections and a corresponding one of the field-effect transistors facing the at least one of the external connections.

9. The circuit arrangement according to claim 1 further comprising a voltage source having feed paths connecting the voltage source to a first feed point and to a second feed point, the first feed point being connected in the current path between the first external connection and the first field-effect transistor, and the second feed point being connected in the current path between the second external connection and the second field-effect transistor.

10. The circuit arrangement according to claim 9 , wherein the voltage source includes a digital-analog transducer.

11. The circuit arrangement according to claim 9 , wherein at least one of the feed paths is connected to a switching element.

12. The circuit arrangement according to claim 10 , wherein at least one of the feed paths is connected to a switching element.

13. A simulator device configured to simulate a sensor including first and second external connections and to change at least one of a current intensity and resistance as a function of a measured variable, the simulator device comprising:

a circuit arrangement comprising a current path connecting the external connections having first and second field-effect transistors and a resistor, and a circuit configured to actuate gates of the field-effect transistors so as to at least one of control and regulate a current through the current path, wherein the resistor is configured as a shunt resistor connected to a bridge rectifier and the circuit configured to actuate the gates of the field-effect transistors comprises a control circuit configured to detect and regulate the current in the current path via a voltage drop at the shunt resistor; and

a control unit configured to specify a setpoint signal to the circuit arrangement.

14. The simulator device according to claim 13 , wherein the simulator device is an HiL simulator.

15. The simulator device according to claim 13 , wherein the sensor is an active sensor.

16. The simulator device according to claim 14 , wherein the sensor is an active sensor.

17. The simulator device according to claim 13 , wherein the sensor is configured to provide input to a control device so as to test a control device.

18. The simulator device according to claim 17 , wherein the control device is a motor vehicle control device.

19. The simulator device according to claim 15 , wherein the sensor is configured to provide input to a control device so as to test a control device.

20. The simulator device according to claim 19 , wherein the control device is a motor vehicle control device.

21. A method for simulating a sensor including first and second external connections configured to change at least one of a current intensity and a resistance between the two external connections as a function of a measured variable, the method comprising:

connecting, via a current path, the external connections having first and second field-effect transistors and a resistor connected therein; and

actuating, via a circuit, gates of the field-effect transistors so as to at least one of control and regulate a current through the current path, wherein the resistor is configured as a shunt resistor incorporated in a bridge rectifier and the circuit comprises a control circuit configured to detect and regulate the current in the current path via a voltage drop at the shunt resistor.