Semiconductor laser device

1. A semiconductor laser device comprising:

a semiconductor laser element configured to emit a fundamental wave;

a transducer configured to receive incident thereon the fundamental wave and convert a wavelength of the fundamental wave to emit wavelength converted light;

a filter configured to selectively transmit wavelength range light having a desired wavelength range of the wavelength converted light;

a sealing member, including a light-transmitting member, configured to enclose the semiconductor laser element, the light-transmitting member being configured to receive the wavelength range light transmitted through the filter and incident on the light-transmitting member, specularly reflect part of the wavelength range light, and substantially transmit the remaining part of the wavelength range light; and

a photoreceptor configured to receive the specularly reflected light from the light-transmitting member; wherein:

the fundamental wave emitted from the semiconductor laser element is partially converted by the transducer to the wavelength converted light, which is transmitted through the filter and reaches the light-transmitting member, which specularly reflects part of the wavelength range light transmitted through the filter as first reflected light and substantially transmits the remaining part of the wavelength range light, and the filter specularly reflects the first reflected light as second reflected light, which is received by the photoreceptor.

2. The semiconductor laser device according to claim 1 , wherein the filter is disposed such that a direction normal to an emitting side of the filter from which the wavelength range light is emitted is not parallel to an optical axis of the wavelength range light.

3. The semiconductor laser device according to claim 2 , wherein the light-transmitting member is disposed such that a direction normal to an incident side thereof where the wavelength range light is incident on the light-transmitting member is parallel to the optical axis of the wavelength range light.

4. The semiconductor laser device according to claim 1 , wherein the transducer includes a solid laser configured to emit light of a desired wavelength in response to the fundamental wave incident thereon, and a nonlinear optical element configured to generate a harmonic in response to the emitted light incident thereon from the solid laser.

5. The semiconductor laser device according to claim 1 , wherein a transducer side of the filter adjacent to the transducer is provided with an antireflective layer for preventing reflection of the wavelength converted light.

6. The semiconductor laser device according to claim 3 , wherein the sealing member includes a base member on which the semiconductor laser element, the transducer, the filter, and the photoreceptor are mounted, and a case configured to join the base member to the light-transmitting member and enclose the semiconductor laser element; and

the base member has an inclined portion configured to support the filter such that the direction normal to the emitting side of the filter is not parallel to the optical axis of the wavelength range light.