IP Library Granted Patent US 9,212,051
Granted Patent B1
US 9,212,051 · App. 13/198,448 · Granted Dec 15, 2015

Systems and methods for forming MEMS assemblies incorporating getters

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Quick Facts
Patent No.
US 9,212,051
App. No.
13/198,448
Granted
Dec 15, 2015
Kind
B1
Abstract

Systems and methods for forming MEMS assemblies incorporating getters are described. One such method for forming and bonding to a microelectromechanical systems (MEMS) assembly includes providing a first MEMS wafer including a metal layer on an inner surface and one or more cavities for forming a MEMS component, attaching a MEMS capping wafer, having at least one through hole via, to the inner surface of the first MEMS wafer thereby forming at least one encapsulated MEMs component within the first MEMS wafer, and bonding a wire to the metal layer through an open end of the at least one through hole via.

Claims (26)

1. A microelectromechanical systems (MEMS) assembly comprising:

a first MEMS wafer comprising a metal layer on an inner surface and one or more cavities for forming a MEMS component;

a MEMS capping wafer attached to the metal layer of the first MEMS wafer, the MEMS capping wafer having at least one through hole via, thereby forming at least one encapsulated MEMs component within the first MEMS wafer; and

a wire bonded to the metal layer through an open end of the at least one through hole via,

wherein a first cavity of the one or more cavities comprises a first conductive pad,

wherein a second cavity of the one or more cavities comprises a second conductive pad, and

wherein each of the first and second conductive pads comprises a getter material.

2. The assembly of claim 1 :

wherein the MEMS capping wafer comprises an inner surface and an outer surface, and one or more electrodes positioned along the inner surface of the MEMS capping wafer, and

wherein the one or more electrodes are attached to the metal layer of the first MEMS wafer.

3. The assembly of claim 2 , wherein a first electrode of the one or more electrodes is positioned between a first through hole via of the at least one through hole via and a first cavity of the one or more cavities.

4. The assembly of claim 1 , wherein the getter material comprises a metal selected from the group consisting of Ti and Cr.

5. The assembly of claim 1 , wherein the MEMS assembly forms one or more accelerometers.

6. The assembly of claim 1 , wherein the wire comprises a ball formed of a portion of the wire, wherein the ball is bonded to the metal layer through the open end of the at least one through hole via.

7. The assembly of claim 1 :

wherein the MEMS capping wafer comprises an inner surface and an outer surface, and one or more electrodes positioned along the inner surface of the MEMS capping wafer, and

wherein the inner surface of the MEMS capping wafer comprises oxide.

8. A microelectromechanical systems (MEMS) assembly comprising:

a first MEMS wafer comprising a metal layer on an inner surface and one or more cavities for forming a MEMS component;

a MEMS capping wafer attached to the metal layer of the first MEMS wafer, the MEMS capping wafer having at least one through hole via, thereby forming at least one encapsulated MEMs component within the first MEMS wafer; and

a wire bonded to the metal layer through an open end of the at least one through hole via,

wherein the MEMS capping wafer comprises an inner surface and an outer surface, and one or more electrodes positioned along the inner surface of the MEMS capping wafer,

wherein the one or more electrodes are attached to the metal layer of the first MEMS wafer,

wherein a first electrode of the one or more electrodes is positioned between a first through hole via of the at least one through hole via and a first cavity of the one or more cavities, and

wherein a second electrode of the one or more electrodes is positioned between a second through hole via of the at least one through hole via and a second cavity of the one or more cavities.

9. The assembly of claim 8 , wherein the first electrode and the second electrode are electrically isolated.

Assignments (9)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0845 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL (FREMONT), LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2019
From: WESTERN DIGITAL (FREMONT), LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050450/0582 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 045501/0158 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038744/0755 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038744/0675 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0845 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2011
From: MONADGEMI, PEZHMAN; WANG, LEI
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 026801/0977 →