Semiconductor device and manufacturing method of the same

1. A manufacturing method of a semiconductor device comprising:

mounting plural semiconductor elements on a wiring board having a wiring layer on an upper surface;

providing a ground electrode member so that the ground electrode member strikes an area of the wiring board where neighboring of the semiconductor elements are provided;

covering the semiconductor elements and the ground electrode member with sealing resin;

cutting the wiring board, the sealing resin and the ground electrode member so that a piece of the semiconductor device including a ground electrode, which is covered with the sealing resin, having an end connected to the wiring layer on the upper surface of the wiring board at a portion covered with the sealing resin, and having another end as an exposed part which is exposed at a side surface of the sealing resin is formed; and

providing a shielding member to cover the sealing resin of the piece of the semiconductor device and be connected to the exposed part of the ground electrode,

wherein solder or a conductive adhesive is provided at the exposed part of the ground electrode exposed at the side surface of the resin,

the shielding member is made come in contact with the exposed part of the around electrode via the conductive adhesive, and

the shielding member is heated so that the metal member and the exposed part of the ground electrode are connected to each other.

2. The manufacturing method of a semiconductor device as claimed in claim 1 , wherein a projection part is formed as a portion of the shielding member and

the exposed part of the ground electrode is connected to the projection part of the shielding member.

3. A manufacturing method of a semiconductor device comprising:

providing a ground electrode member on a separation line of a wiring board where plural semiconductor elements are provided, the separation line separating neighboring semiconductor elements, the wiring board having a wiring layer on an upper surface;

sealing the ground electrode member and the semiconductor elements by resin;

cutting the ground electrode member along the separation line when the wiring board where the plural semiconductor elements are provided is cut, so that a ground electrode, which is covered with the resin, has an end connected to the wiring layer on the upper surface of the wiring board at a portion covered with the resin, and has another end as an exposed part which is exposed at a side surface of the resin; and

providing a metal member configured to cover the resin so as to make the metal member come in contact with the exposed part of the ground electrode exposed at the side surface of the resin,

wherein solder or a conductive adhesive is provided at the exposed part of the ground electrode exposed at the side surface of the resin,

the metal member is made come in contact with the exposed part of the ground electrode via the conductive adhesive, and

the metal member is heated so that the metal member and the exposed part of the ground electrode are connected to each other.

4. The manufacturing method of a semiconductor device as claimed in claim 3 , wherein the metal member is a plate-shaped member; and

the metal member is made to come in contact with the exposed part of the ground electrode via the conductive adhesive by bending the metal member.

5. The manufacturing method of a semiconductor device as claimed in claim 3 , wherein a projection part is formed as a portion of the metal member; and

the exposed part of the ground electrode is connected to the projection part of the metal member.