Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use
View Patent ↗The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.
1. A process for producing a semiconductive indium oxide layer, comprising
coating a substrate with a liquid, anhydrous composition comprising
a) at least one indium alkoxide and
b) at least one solvent,
optionally drying; and thermally treating a coated substrate comprising indium alkoxide and/or indium hydroxide at temperatures greater than 250° C.,
wherein said liquid, anhydrous composition comprises less than 200 ppm of water.
2. A process according to claim 1 , wherein, the indium alkoxide is an indium(III) alkoxide.
3. A process according to claim 2 , wherein, the indium(III) alkoxide is an alkoxide with at least one C1- to C15-alkoxy or -oxyalkylalkoxy group.
4. A process according to claim 3 , wherein, the indium(III) alkoxide is an alkoxide of the generic formula In(OR) 3 in which R is a C1- to C15-alkyl or -alkyloxyalkyl group.
5. A process according to claim 4 , wherein, the indium(III) alkoxide is In(OR) 3 In(OCH 3 ) 3 , In(OCH 2 CH 3 ) 3 , In(OCH 2 CH 2 OCH 3 ) 3 , In(OCH(CH 3 ) 2 ) 3 or In(O(CH 3 ) 3 ) 3 .
6. A process according to claim 1 , wherein the indium alkoxide is present in proportions of 1 to 15% by weight, based on the total mass of the composition.
7. A process according to claim 1 , wherein, the at least one solvent is an aprotic or weakly protic solvent.
8. A process according to claim 7 , wherein, the at least one solvent is isopropanol, tetrahydrofurfuryl alcohol, tert-butanol or toluene.
9. A process according to claim 1 , wherein, the composition has a viscosity of 1 mPa·s to 10 Pa·s.
10. A process according to claim 1 , wherein, the substrate consists of glass, silicon, silicon dioxide, a metal oxide or transition metal oxide or a polymeric material.
11. A process according to claim 1 , wherein, the coating is affected by at least one of a printing process, spraying process, rotational coating process or a dipping process.
12. A process according to claim 1 , wherein, the thermal treatment is effected at temperatures of 250° C. to 360° C.
13. The process according to claim 1 , wherein said semiconductive indium oxide layer does not comprise zinc oxide.
14. An indium oxide layer produced by a process according to claim 13 .
15. An electronic component comprising at least one indium oxide layer according to claim 14 .