Optoelectronic semiconductor component and display means

1. An optoelectronic semiconductor component comprising:

a carrier;

at least two optoelectronic semiconductor chips which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation and which are mounted on a mounting surface of the carrier; and

at least two non-rotationally symmetrical lens bodies which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface,

wherein one of the lens bodies is arranged downstream of each of the semiconductor chips in an emission direction, and

wherein a surface shape of at least one or all of the lens bodies, within a z value deviation of at most 10% of a height of the respective lens body, obeys the following equation:

z ( x,y )=−0.33866 x 2 −0.93234 y 2 −0.54136 x 4 −1.25032 x 2 y 2 +1.78606 y 4 +0.50057 x 6 +1.27170 x 4 y 2 +0.06042 x 2 y 4 −4.44960 y 6 −0.10344 x 8 +1.56205 x 6 y 2 +6.38833 x 4 y 4 +2.05268 x 2 y 6 −18.7818 y 8 −0.158501 x 10 −2.955774 x 8 y 2 −10.73336 x 6 y 4 −26.66134 x 4 y 6 −2.344646 x 2 y 8 +0.127770 y 10 .

2. The optoelectronic semiconductor component according to claim 1 , wherein an aspect ratio of the lens bodies with regard to the mutually orthogonal directions lies between 0.3 and 0.9 inclusive.

3. The optoelectronic semiconductor component according to claim 1 , wherein maximum extents of the lens bodies in the mutually orthogonal directions amount to at most nine times maximum dimensions of the semiconductor chips in corresponding directions.

4. The optoelectronic semiconductor component according to claim 1 , wherein the height of the lens bodies is between 0.25 times and 0.95 times, inclusive, a maximum extent of the lens bodies in the mutually orthogonal directions.

5. The optoelectronic semiconductor component according to claim 1 , wherein adjacent lens bodies are optically isolated from one another with regard to the radiation emitted by the semiconductor chips.

6. The optoelectronic semiconductor component according to claim 1 , wherein a light collection angle of the lens bodies with regard to the radiation emitted by the semiconductor chips amount to at least 145° in a horizontal direction and to at least 130° in a vertical direction.

7. The optoelectronic semiconductor component according to claim 1 , wherein each lens body has a different shape than the other lens bodies.

8. The optoelectronic semiconductor component according to claim 1 , wherein the lens bodies, in plan view of the mounting surface, are arranged in a triangular arrangement.

9. The optoelectronic semiconductor component according to claim 1 , further comprising a potting body located between the lens bodies and the semiconductor chips, wherein, when viewed in the emission direction, the lens bodies are located on the potting body.

10. The optoelectronic semiconductor component according to claim 9 , wherein all the lens bodies or wherein all the lens bodies and the potting body are made in one piece and comprise the same material.

11. The optoelectronic semiconductor component according to claim 1 , further comprising at least one shield against extraneous radiation.

12. A display device with a plurality of pixels, wherein

at least one of the pixels is formed by the optoelectronic semiconductor component according to claim 1 , and

a distance between adjacent pixels amounts to between 4 mm and 75 mm inclusive.

13. The optoelectronic semiconductor component according to claim 1 , wherein the lens bodies, in plan view of the mounting surface, are arranged in a quadrilateral arrangement.

14. The optoelectronic semiconductor component according to claim 1 , wherein the lens bodies, in plan view of the mounting surface, are arranged in a quadrilateral arrangement in which the arrangement comprises a further central lens body.