Surge absorbing element
A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.
1. A surge absorbing element, comprising:
a first electrode,
a second electrode arranged to be opposed to the first electrode, and
a ceramic layer, the ceramic layer being at least partially brought into contact with the first electrode and the second electrode,
wherein the ceramic layer has a polycrystal structure comprising a plurality of crystal grains, and
wherein the ceramic layer has voids therein, a void ratio falls within a range from 25% by volume to 92% by volume, inclusive, with respect to the volume of the ceramic layer.
2. The surge absorbing element according to claim 1 ,
wherein the crystal grains comprise ZnO as a main component, and a solid solution that is a p-type semiconductor and has a perovskite structure present within grain boundaries of the crystal grains.
3. The surge absorbing element according to claim 1 ,
wherein the crystal grains comprise ZnO as a main component, and a solid solution that has a perovskite structure expressed by a composition formula of ABO 3 present in grain boundaries of the crystal grains,
where A is at least one of Sr, Ca and Ba, and B is at least one of Co, Mn and Cr.
4. The surge absorbing element according to claim 3 ,
wherein the content by percentage of the solid solution having the perovskite structure ranges from 0.3% by mole or more to 15% by mole or less of a total amount of the ZnO and the solid solution having the perovskite structure.
5. The surge absorbing element according to claim 1 ,
wherein each of the first and second electrodes is shaped as a sheet having a principal surface, at least one portion of the principal surface of the first electrode overlaps at least one portion of that of the second electrode with a space therebetween, so that a gap region is formed, and the ceramic layer is at least partially sandwiched between the first and second electrodes in the gap region.
6. A surge absorbing element, comprising:
a first electrode,
a second electrode arranged to be opposed to the first electrode, and
a ceramic layer, the layer being at least partially brought into contact with the first electrode and the second electrode, and the layer having a polycrystal structure comprising a plurality of crystal grains showing voltage nonlinearity,
wherein the ceramic layer satisfies at least one of the following two conditions:
a void ratio falls within a range from 25% by volume to 92% by volume, inclusive, and
a through-void, through which the first electrode communicates with the second electrode, is available;
wherein the crystal grains comprise ZnO as a main component, and a solid solution that has a perovskite structure expressed by a composition formula of ABO 3 present in grain boundaries of the crystal grains,
where A is at least one of Sr, Ca and Ba, and B is at least one of Co, Mn and Cr.
7. The surge absorbing element according to claim 6 , wherein the content by percentage of the solid solution having the perovskite structure ranges from 0.3% by mole to 15% by mole, inclusive, of the total amount of the ZnO and the solid solution having the perovskite structure.
8. The surge absorbing element according to claim 1 , wherein the crystal grains show voltage nonlinearity.
9. The surge absorbing element according to claim 1 , wherein the crystal grains comprise ZnO as a main component.
10. The surge absorbing element according to claim 1 , wherein the crystal grains comprise a solid solution that is a p-type semiconductor and has a perovskite structure present within grain boundaries of the crystal grains.
11. A surge absorbing element, comprising:
a first electrode,
a second electrode arranged to be opposed to the first electrode, and
a ceramic layer, the ceramic layer being at least partially brought into contact with the first electrode and the second electrode,
wherein the ceramic layer has a polycrystal structure comprising a plurality of crystal grains,
the ceramic layer includes at least one through-void, through which the first electrode communicates with the second electrode, and
the crystal grains comprise ZnO as a main component, and a solid solution that has a perovskite structure expressed by a composition formula of ABO 3 present in grain boundaries of the crystal grains,
where A is at least one of Sr, Ca and Ba, and B is at least one of Co, Mn and Cr.
12. The surge absorbing element according to claim 11 ,
wherein the content by percentage of the solid solution having the perovskite structure ranges from 0.3% by mole or more to 15% by mole or less of a total amount of the ZnO and the solid solution having the perovskite structure.
13. The surge absorbing element according to claim 11 ,
wherein each of the first and second electrodes is shaped as a sheet having a principal surface, at least one portion of the principal surface of the first electrode overlaps at least one portion of that of the second electrode with a space therebetween, so that a gap region is formed, and the ceramic layer is at least partially sandwiched between the first and second electrodes in the gap region.
14. The surge absorbing element according to claim 11 , wherein the crystal grains show voltage nonlinearity.