Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device
According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
1. A semiconductor light emitting device comprising:
a stacked structure body having a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and
an electrode having a first metal layer provided on the second semiconductor layer and including silver or silver alloy, a second metal layer provided on the first metal layer and including at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium, and a third metal layer provided on the second metal layer, a thickness of the third metal layer along a direction from the first semiconductor layer toward the second semiconductor layer being equal to or greater than a thickness of the second metal layer along the direction,
wherein the electrode further includes a fourth metal layer on a side opposite to the second semiconductor layer with respect to the third metal layer, and
a diffusion coefficient of the third metal layer to the fourth metal layer is smaller than a diffusion coefficient of the second metal layer to the fourth metal layer.
2. The device according to claim 1 , wherein
a work function of the third metal layer is higher than a work function of aluminum and titanium.
3. The device according to claim 1 , wherein
a diffusion coefficient of the third metal layer to silver is smaller than a diffusion coefficient of the second metal layer to silver.
4. The device according to claim 1 , wherein
the first metal layer is a single layer film including silver.
5. The device according to claim 1 , wherein
a content of an element included in the second metal layer in a region including a boundary surface between the first metal layer and the second metal layer is higher than a content of the element in a region distant from the boundary surface of the first metal layer.
6. The device according to claim 1 , wherein
a peak wavelength of emission light of the light emitting layer is 370 nanometers or more and 400 nanometers or less.
7. The device according to claim 1 , further comprising a substrate,
the electrode being provided between the substrate and the stacked structure body.
8. The device according to claim 1 , wherein
a surface of the first semiconductor layer is provided with irregularities.
9. A semiconductor light emitting device comprising:
a stacked structure body having a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and
an electrode having a first metal layer provided on the second semiconductor layer and including silver or silver alloy, a second metal layer provided on the first metal layer and including at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium, and a third metal layer provided on the second metal layer and having an internal stress smaller than an internal stress of the second metal layer,
wherein the electrode further includes a fourth metal layer on a side opposite to the second semiconductor layer with respect to the third metal layer, and
a diffusion coefficient of the third metal layer to the fourth metal layer is smaller than a diffusion coefficient of the second metal layer to the fourth metal layer.
10. The device according to claim 9 , wherein
a work function of the third metal layer is higher than a work function of aluminum and titanium.
11. The device according to claim 9 , wherein
a diffusion coefficient of the third metal layer to silver is smaller than a diffusion coefficient of the second metal layer to silver.
12. The device according to claim 9 , wherein
the first metal layer is a single layer film including silver.
13. The device according to claim 9 , wherein
a content of an element included in the second metal layer in a region including a boundary surface between the first metal layer and the second metal layer is higher than a content of the element in a region distant from the boundary surface of the first metal layer.
14. The device according to claim 9 , wherein
a surface of the first semiconductor layer is provided with irregularities.
15. A semiconductor light emitting device comprising:
a stacked structure body having a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and
an electrode having a first metal layer provided on the second semiconductor layer and including silver or silver alloy, a second metal layer provided on the first metal layer and including at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium, and a third metal layer provided on the second metal layer, a thickness of the third metal layer along a direction from the first semiconductor layer toward the second semiconductor layer being equal to or greater than a thickness of the second metal layer along the direction,
wherein a content of an element included in the second metal layer in a region including a boundary surface between the first metal layer and the second metal layer is higher than a content of the element in a region distant from the boundary surface of the first metal layer.
16. The device according to claim 15 , wherein
a work function of the third metal layer is higher than a work function of aluminum and titanium.
17. The device according to claim 15 , wherein
a diffusion coefficient of the third metal layer to silver is smaller than a diffusion coefficient of the second metal layer to silver.
18. The device according to claim 15 , wherein
the first metal layer is a single layer film including silver.
19. The device according to claim 15 , wherein
a peak wavelength of emission light of the light emitting layer is 370 nanometers or more and 400 nanometers or less.
20. The device according to claim 15 , further comprising a substrate,
the electrode being provided between the substrate and the stacked structure body.
21. A semiconductor light emitting device comprising:
a stacked structure body having a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and
an electrode having a first metal layer provided on the second semiconductor layer and including silver or silver alloy, a second metal layer provided on the first metal layer and including at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium, and a third metal layer provided on the second metal layer and having an internal stress smaller than an internal stress of the second metal layer,
wherein a content of an element included in the second metal layer in a region including a boundary surface between the first metal layer and the second metal layer is higher than a content of the element in a region distant from the boundary surface of the first metal layer.
22. The device according to claim 21 , wherein
a work function of the third metal layer is higher than a work function of aluminum and titanium.
23. The device according to claim 21 , wherein
a diffusion coefficient of the third metal layer to silver is smaller than a diffusion coefficient of the second metal layer to silver.
24. The device according to claim 21 , wherein
the first metal layer is a single layer film including silver.